M29W128GL70ZA6E

Product Overview

• Category: Flash Memory
• Use: Data storage and retrieval in electronic devices
• Characteristics: High capacity, non-volatile, fast read/write speeds
• Package: Integrated Circuit (IC)
• Essence: Non-volatile memory for long-term data storage
• Packaging/Quantity: Available in various packaging options, typically sold individually

Specifications

• Model: M29W128GL70ZA6E
• Capacity: 128 gigabits (16 gigabytes)
• Interface: Parallel
• Voltage: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Speed: Read access time of 70 ns, page program time of 10 μs

Detailed Pin Configuration

The M29W128GL70ZA6E flash memory module has the following pin configuration:

1. VCC: Power supply voltage
2. GND: Ground
3. A0-A19: Address inputs
4. DQ0-DQ15: Data input/output lines
5. WE#: Write enable control
6. CE#: Chip enable control
7. OE#: Output enable control
8. RP#/BYTE#: Reset/byte control
9. RY/BY#: Ready/busy status output
10. WP#/ACC: Write protect or accelerated programming control
11. NC: No connection

Functional Features

• High-speed data transfer with fast read and write operations
• Non-volatile memory retains data even when power is disconnected
• Reliable and durable for long-term data storage
• Supports various operating temperatures for versatile applications
• Flexible interface options for easy integration into different systems

Advantages and Disadvantages

Advantages: - Large storage capacity - Fast read and write speeds - Non-volatile memory ensures data retention - Versatile operating temperature range

Disadvantages: - Requires additional circuitry for proper integration - Limited endurance compared to other storage technologies

Working Principles

The M29W128GL70ZA6E flash memory utilizes a floating-gate transistor technology. It stores data by trapping electric charges in the floating gate, which can be later retrieved by applying appropriate voltages. The memory cells are organized into pages, allowing simultaneous programming or erasing of multiple cells. This flash memory operates on the principle of electrical charge injection and removal to represent binary data.

Detailed Application Field Plans

The M29W128GL70ZA6E flash memory is widely used in various electronic devices, including but not limited to:

1. Solid-state drives (SSDs)
2. Digital cameras
3. Mobile phones
4. Tablets
5. Automotive electronics
6. Industrial control systems

Its high capacity, fast access times, and reliability make it suitable for applications that require large amounts of non-volatile storage.

Detailed and Complete Alternative Models

1. M29W128GL70N6E
2. M29W128GL70ZB6E
3. M29W128GL70NB6E
4. M29W128GL70ZC6E
5. M29W128GL70NC6E

These alternative models offer similar specifications and functionality, providing options for different system requirements.

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