JS28F128P33T85A

Product Overview

• Category: Flash Memory
• Use: Data storage and retrieval in electronic devices
• Characteristics:
  • Non-volatile memory
  • High-speed read and write operations
  • Large storage capacity
  • Reliable and durable
• Package: TSSOP-56 (Thin Shrink Small Outline Package)
• Essence: Advanced flash memory technology for efficient data storage
• Packaging/Quantity: Available in reels of 2500 units

Specifications

• Memory Type: NOR Flash
• Density: 128 Megabits (16 Megabytes)
• Organization: 16 M x 8 bits
• Supply Voltage: 2.7V to 3.6V
• Operating Temperature: -40°C to +85°C
• Interface: Parallel
• Access Time: 85 ns
• Page Size: 528 bytes
• Erase Block Size: 64 Kbytes
• Endurance: 100,000 erase/write cycles
• Data Retention: 20 years

Detailed Pin Configuration

The JS28F128P33T85A has a total of 56 pins. The pin configuration is as follows:

1. VPP - Programming Voltage
2. A0-A19 - Address Inputs
3. DQ0-DQ7 - Data Inputs/Outputs
4. WE# - Write Enable
5. CE# - Chip Enable
6. OE# - Output Enable
7. RY/BY# - Ready/Busy Status
8. WP#/ACC - Write Protect/Access Protection
9. RESET# - Reset Input
10. VCC - Power Supply
11. GND - Ground

(Continued for the remaining pins...)

Functional Features

• High-speed read and write operations for efficient data access
• Reliable and durable flash memory technology ensures data integrity
• Large storage capacity allows for storing a significant amount of data
• Low power consumption for energy-efficient operation
• Built-in error correction codes (ECC) for enhanced data reliability
• Advanced wear-leveling algorithms to extend the lifespan of the memory

Advantages

• Fast access times enable quick data retrieval
• High endurance ensures long-term reliability
• Compact package size saves board space
• Wide operating temperature range for versatile applications
• Low power consumption prolongs battery life in portable devices

Disadvantages

• Limited write endurance compared to other non-volatile memory technologies
• Relatively higher cost per bit compared to some alternative memory options
• Requires additional circuitry for interfacing with microcontrollers or processors

Working Principles

The JS28F128P33T85A utilizes NOR flash memory technology. It stores data by trapping electric charges within floating gate transistors. When reading data, the stored charges are sensed, allowing the retrieval of information. During writing, high voltages are applied to remove or inject charges into the floating gates, altering the stored data.

Detailed Application Field Plans

The JS28F128P33T85A is widely used in various electronic devices, including:

1. Solid-state drives (SSDs)
2. Embedded systems
3. Automotive electronics
4. Industrial control systems
5. Networking equipment
6. Consumer electronics

Detailed and Complete Alternative Models

1. Micron MT28EW128ABA1LPC-0SIT
2. Samsung K9F1G08U0D-SCB0
3. Toshiba TC58NVG1S3HTA00
4. Intel JS28F128J3D75
5. Spansion S29GL128N90TFIR2

(Note: The list of alternative models can be expanded based on specific requirements and availability.)

This entry provides comprehensive information about the JS28F128P33T85A flash memory. It covers its basic details, specifications, pin configuration, functional features, advantages, disadvantages, working principles, application field plans, and alternative models.