QT161-DG

Product Overview

• Category: Electronic Component
• Use: Signal Processing
• Characteristics: High-speed, Low-power
• Package: Dual-Gate MOSFET
• Essence: Amplification and Switching
• Packaging/Quantity: SMD, 100 units per reel

Specifications

• Type: N-channel
• Gate-Source Voltage (VGS): ±20V
• Drain-Source Voltage (VDS): 30V
• Drain Current (ID): 50mA
• Power Dissipation (PD): 200mW
• Operating Temperature Range: -55°C to +150°C

Detailed Pin Configuration

The QT161-DG has a dual-gate configuration with the following pinout:

1. Gate 1 (G1)
2. Source (S)
3. Drain (D)
4. Gate 2 (G2)

Functional Features

• High gain and low noise characteristics
• Excellent linearity for signal amplification
• Fast switching speed for digital applications
• Low power consumption for energy efficiency
• Wide operating temperature range for versatile usage

Advantages and Disadvantages

Advantages

• High-speed performance suitable for high-frequency applications
• Low power consumption extends battery life in portable devices
• Compact SMD package allows for space-saving designs
• Wide operating temperature range enables usage in extreme environments

Disadvantages

• Limited voltage and current handling capabilities compared to other MOSFETs
• Sensitivity to electrostatic discharge (ESD) requires proper handling precautions

Working Principles

The QT161-DG is a dual-gate MOSFET that operates based on the principles of field-effect transistors. It utilizes two gates to control the flow of current between the source and drain terminals. By applying appropriate voltages to the gates, the device can amplify or switch signals with high efficiency.

Detailed Application Field Plans

The QT161-DG finds applications in various fields, including:

1. RF Amplification: The high gain and low noise characteristics make it suitable for amplifying radio frequency signals in communication systems.
2. Oscillator Circuits: Its fast switching speed allows for the generation of stable oscillations in electronic circuits.
3. Mixer Circuits: The dual-gate configuration enables efficient mixing of different frequency signals.
4. Low-Noise Amplifiers: It is commonly used in audio amplifiers to achieve clean and distortion-free sound reproduction.

Detailed and Complete Alternative Models

1. QT162-DG: Similar to QT161-DG but with higher voltage and current handling capabilities.
2. QT160-DG: Lower power version with reduced current handling capacity.
3. QT163-DG: Dual-gate MOSFET with enhanced linearity for precise signal amplification.

These alternative models offer similar functionality and can be considered based on specific application requirements.

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