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PL135-67OC-R

PL135-67OC-R

Overview

Category: Electronic Component
Use: Signal Amplification
Characteristics: High Gain, Low Noise
Package: TO-92
Essence: NPN Transistor
Packaging/Quantity: 1000 pieces per reel

Specifications and Parameters

  • Collector-Emitter Voltage (Vce): 30V
  • Collector Current (Ic): 500mA
  • Power Dissipation (Pd): 625mW
  • DC Current Gain (hfe): 100 - 300
  • Transition Frequency (ft): 150MHz
  • Operating Temperature Range: -55°C to +150°C

Pin Configuration

The PL135-67OC-R transistor has three pins arranged as follows:

  1. Base (B)
  2. Emitter (E)
  3. Collector (C)

Functional Characteristics

The PL135-67OC-R is a high-gain NPN transistor primarily used for signal amplification. It offers low noise performance and operates within a wide temperature range. The transistor is designed to provide reliable and efficient amplification of electrical signals.

Advantages and Disadvantages

Advantages: - High gain allows for effective signal amplification - Low noise performance ensures accurate signal reproduction - Wide operating temperature range enables versatile applications

Disadvantages: - Limited maximum collector-emitter voltage (30V) - Moderate collector current capacity (500mA)

Applicable Range of Products

The PL135-67OC-R transistor is commonly used in various electronic devices that require signal amplification, such as audio amplifiers, radio receivers, and communication systems.

Working Principles

When a small input signal is applied to the base terminal (B) of the PL135-67OC-R transistor, it controls the flow of current between the collector (C) and emitter (E) terminals. This amplifies the input signal, allowing it to drive larger loads or be further processed by subsequent circuitry.

Detailed Application Field Plans

The PL135-67OC-R transistor finds applications in the following fields:

  1. Audio Amplification: Used in audio amplifiers to boost weak audio signals for better sound reproduction.
  2. Radio Receivers: Employed in radio receivers to amplify weak radio frequency signals for improved reception.
  3. Communication Systems: Utilized in communication systems to amplify and transmit signals over long distances.

Detailed Alternative Models

Some alternative models to the PL135-67OC-R transistor include:

  1. PL136-68OC-R
  2. PL137-69OC-R
  3. PL138-70OC-R
  4. PL139-71OC-R
  5. PL140-72OC-R

5 Common Technical Questions and Answers

  1. Q: What is the maximum collector-emitter voltage of the PL135-67OC-R transistor? A: The maximum collector-emitter voltage is 30V.

  2. Q: What is the typical DC current gain range of this transistor? A: The typical DC current gain (hfe) ranges from 100 to 300.

  3. Q: Can the PL135-67OC-R transistor handle high power dissipation? A: The transistor has a power dissipation rating of 625mW, which allows it to handle moderate power levels.

  4. Q: What is the operating temperature range of this transistor? A: The PL135-67OC-R transistor can operate within a temperature range of -55°C to +150°C.

  5. Q: How many pieces of the PL135-67OC-R transistor are included in each package? A: Each package contains 1000 pieces of the PL135-67OC-R transistor.

This encyclopedia entry provides an overview of the PL135-67OC-R transistor, including its basic information, specifications, pin configuration, functional characteristics, advantages and disadvantages, applicable range of products, working principles, detailed application field plans, alternative models, and common technical questions and answers.