AT27BV010-12VC

Product Overview

Category

AT27BV010-12VC belongs to the category of non-volatile memory devices.

Use

It is primarily used for storing and retrieving digital information in electronic systems.

Characteristics

• Non-volatile: Retains data even when power is turned off.
• High density: Offers a large storage capacity.
• Fast access time: Allows for quick retrieval of stored data.
• Low power consumption: Operates efficiently with minimal power usage.

Package

AT27BV010-12VC is available in a standard integrated circuit (IC) package.

Essence

The essence of AT27BV010-12VC lies in its ability to provide reliable and persistent storage for electronic systems.

Packaging/Quantity

This product is typically packaged in reels or tubes, with each containing a specific quantity of ICs.

Specifications

• Model: AT27BV010-12VC
• Memory Size: 1 Megabit (128 Kilobytes)
• Access Time: 120 nanoseconds
• Operating Voltage: 2.7V - 3.6V
• Temperature Range: -40°C to +85°C
• Interface: Parallel

Detailed Pin Configuration

The AT27BV010-12VC has a total of 32 pins, which are assigned specific functions as follows:

1. A0-A16: Address Inputs
2. CE: Chip Enable
3. OE: Output Enable
4. WE: Write Enable
5. I/O0-I/O7: Data Input/Output
6. VCC: Power Supply
7. GND: Ground

Functional Features

• Random Access: Allows for reading and writing data at any address within the memory.
• Byte-Writable: Enables individual bytes to be written without affecting other data.
• Erasable: Supports erasing of the entire memory or specific sectors.
• High Reliability: Provides robust data retention and endurance characteristics.

Advantages and Disadvantages

Advantages

• Non-volatile nature ensures data persistence.
• High storage density accommodates large amounts of information.
• Fast access time facilitates quick data retrieval.
• Low power consumption contributes to energy efficiency.

Disadvantages

• Limited write endurance compared to other memory technologies.
• Relatively higher cost per bit compared to volatile memory options.
• Requires additional circuitry for programming and erasing operations.

Working Principles

AT27BV010-12VC utilizes a combination of electronic circuits and semiconductor technology to store and retrieve digital data. It employs a floating-gate transistor structure that allows for non-volatile storage of charge, representing binary information.

The memory cells within the device can be electrically programmed and erased using specific voltage levels applied to the control pins. This enables data to be written, modified, and erased as required by the system.

Detailed Application Field Plans

AT27BV010-12VC finds applications in various electronic systems, including but not limited to: - Embedded systems - Consumer electronics - Automotive electronics - Industrial control systems - Communication devices

Its ability to retain data without power makes it suitable for applications where persistent storage is essential, such as firmware storage, configuration data, and program code storage.

Detailed and Complete Alternative Models

Some alternative models to AT27BV010-12VC include: - AT28C010-12PC - SST39SF010A-70-4C-PHE - M29F010B-45K1E

These alternatives offer similar functionality and specifications, providing options for different design requirements and availability considerations.

In conclusion, AT27BV010-12VC is a non-volatile memory device with high storage capacity, fast access time, and low power consumption. Its functional features, advantages, and disadvantages make it suitable for various applications in the electronics industry.