AT25512N-SH-T

Product Overview

Category

AT25512N-SH-T belongs to the category of non-volatile memory integrated circuits.

Use

It is primarily used for storing data in electronic devices, such as microcontrollers and embedded systems.

Characteristics

• Non-volatile: Retains stored data even when power is removed.
• High storage capacity: Can store up to 512 kilobits (64 kilobytes) of data.
• Serial interface: Communicates with the host device using a serial protocol.
• Low power consumption: Operates at low voltage levels, making it suitable for battery-powered devices.

Package

AT25512N-SH-T is available in a small outline package (SOP), which ensures easy integration into circuit boards.

Essence

The essence of AT25512N-SH-T lies in its ability to provide reliable and non-volatile data storage in various electronic applications.

Packaging/Quantity

This product is typically packaged in reels or tubes, with each reel or tube containing a specific quantity of AT25512N-SH-T chips. The exact quantity may vary depending on the manufacturer's specifications.

Specifications

• Memory Capacity: 512 kilobits (64 kilobytes)
• Interface: Serial Peripheral Interface (SPI)
• Operating Voltage: 2.7V - 5.5V
• Operating Temperature Range: -40°C to +85°C
• Data Retention: Up to 100 years
• Write Endurance: 1 million write cycles

Detailed Pin Configuration

The AT25512N-SH-T has a total of 8 pins, each serving a specific purpose:

1. Chip Select (/CS): Enables communication between the host device and the memory chip.
2. Serial Clock (SCK): Provides the clock signal for synchronous data transfer.
3. Serial Data Input (SI): Transfers data from the host device to the memory chip.
4. Serial Data Output (SO): Transfers data from the memory chip to the host device.
5. Write Protect (/WP): Allows or restricts write operations to the memory chip.
6. VCC: Power supply input (+2.7V to +5.5V).
7. Ground (GND): Common ground reference.
8. Hold (/HOLD): Suspends ongoing operations temporarily.

Functional Features

• Byte and Page Write Operations: Allows data to be written in individual bytes or larger page sizes for efficient programming.
• Sector Lockdown: Provides protection by allowing specific sectors of the memory to be write-protected.
• Software and Hardware Protection: Supports both software and hardware methods to prevent unauthorized access to stored data.
• Fast Read Access Time: Enables quick retrieval of data with a typical access time of 25 nanoseconds.

Advantages and Disadvantages

Advantages

• Non-volatile storage ensures data retention even during power loss.
• High storage capacity suitable for various applications.
• Low power consumption extends battery life in portable devices.
• Compact package size facilitates integration into circuit boards.
• Wide operating temperature range allows usage in harsh environments.

Disadvantages

• Limited write endurance compared to other memory technologies.
• Relatively slower write speeds compared to volatile memory types.
• Higher cost per bit compared to some alternative memory options.

Working Principles

AT25512N-SH-T utilizes a floating-gate transistor technology called Electrically Erasable Programmable Read-Only Memory (EEPROM). It stores data by trapping electric charges in the floating gate, which can be selectively removed or added using electrical signals. This allows for non-volatile data storage that can be rewritten multiple times.

Detailed Application Field Plans

AT25512N-SH-T finds application in various electronic systems, including but not limited to: - Microcontrollers - Embedded systems - Automotive electronics - Industrial control systems - Consumer electronics

Detailed and Complete Alternative Models

Some alternative models that offer similar functionality to AT25512N-SH-T include: - AT25080A - AT25128A - AT25256A - AT25320A

These models differ in terms of storage capacity, package type, and other specifications. Users should select the most suitable alternative based on their specific requirements.

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