DS1646P-120+ - Product Overview

Basic Information

Category: Integrated Circuits (ICs)

Use: The DS1646P-120+ is a non-volatile static RAM (NVSRAM) integrated circuit. It combines the functionality of both RAM and non-volatile memory, providing data storage even when power is lost.

Characteristics: - Non-volatile memory - Static random-access memory (SRAM) - 1 Megabit (128K x 8) capacity - 120ns access time - Low power consumption - DIP package type - RoHS compliant

Package: The DS1646P-120+ is available in a 28-pin Dual In-line Package (DIP), which allows for easy integration into various electronic systems.

Essence: The essence of the DS1646P-120+ lies in its ability to retain data even in the absence of power. This makes it ideal for applications where data integrity is crucial, such as in industrial control systems, medical equipment, and automotive electronics.

Packaging/Quantity: The DS1646P-120+ is typically sold in reels or tubes, with a quantity of 25 units per reel/tube.

Specifications

• Memory Capacity: 1 Megabit (128K x 8)
• Access Time: 120ns
• Supply Voltage: 4.5V to 5.5V
• Operating Temperature Range: -40°C to +85°C
• Data Retention: >10 years
• Write Endurance: 10^14 cycles
• Package Type: 28-pin DIP

Detailed Pin Configuration

The DS1646P-120+ features a 28-pin DIP package with the following pin configuration:

```

Pin Name Description

1 VCC Power Supply 2 DQ0 Data Input/Output Bit 0 3 DQ1 Data Input/Output Bit 1 4 DQ2 Data Input/Output Bit 2 5 DQ3 Data Input/Output Bit 3 6 DQ4 Data Input/Output Bit 4 7 DQ5 Data Input/Output Bit 5 8 DQ6 Data Input/Output Bit 6 9 DQ7 Data Input/Output Bit 7 10 CE Chip Enable 11 OE Output Enable 12 WE Write Enable 13 GND Ground 14 NC No Connection 15 A0 Address Bit 0 16 A1 Address Bit 1 17 A2 Address Bit 2 18 A3 Address Bit 3 19 A4 Address Bit 4 20 A5 Address Bit 5 21 A6 Address Bit 6 22 A7 Address Bit 7 23 A8 Address Bit 8 24 A9 Address Bit 9 25 A10 Address Bit 10 26 A11 Address Bit 11 27 A12 Address Bit 12 28 VBAT Battery Backup Input ```

Functional Features

The DS1646P-120+ offers the following functional features:

1. Non-volatile Storage: The integrated non-volatile memory allows data to be retained even when power is lost, ensuring data integrity and reliability.
2. High-Speed Access: With a fast access time of 120ns, the DS1646P-120+ provides quick read and write operations, enhancing overall system performance.
3. Low Power Consumption: The device operates at low power, making it suitable for battery-powered applications where energy efficiency is crucial.
4. Easy Integration: The 28-pin DIP package enables straightforward integration into various electronic systems, facilitating design and assembly processes.

Advantages and Disadvantages

Advantages: - Combines RAM and non-volatile memory functionality - Data retention during power loss - Fast access time - Low power consumption - RoHS compliant

Disadvantages: - Limited storage capacity (1 Megabit) - Relatively slower compared to traditional SRAM

Working Principles

The DS1646P-120+ utilizes a combination of volatile static random-access memory (SRAM) and non-volatile memory technology. When power is applied, the device operates as a standard SRAM, allowing read and write operations. However, unlike traditional SRAM, the DS1646P-120+ incorporates non-volatile memory cells that store data even when power is lost. This is achieved through the use of an integrated battery backup input (VBAT), which ensures continuous power supply to the non-volatile memory section.

Detailed Application Field Plans

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