MX29LV800CBTI-55Q

Product Overview

Category

The MX29LV800CBTI-55Q belongs to the category of flash memory chips.

Use

This product is primarily used for data storage in electronic devices such as computers, smartphones, and digital cameras.

Characteristics

• Non-volatile memory: The MX29LV800CBTI-55Q retains stored data even when power is removed.
• High capacity: This chip has a storage capacity of 8 megabits (1 megabyte).
• Fast access time: It offers quick read and write operations, ensuring efficient data transfer.
• Low power consumption: The MX29LV800CBTI-55Q is designed to minimize energy usage.

Package

The MX29LV800CBTI-55Q is available in a compact Thin Small Outline Package (TSOP) format.

Essence

This flash memory chip provides reliable and high-capacity storage for various electronic devices, enabling efficient data management.

Packaging/Quantity

The MX29LV800CBTI-55Q is typically packaged in reels or trays, with each package containing a specific quantity of chips. The exact quantity may vary depending on the supplier.

Specifications

• Memory Type: Flash
• Capacity: 8 Megabits (1 Megabyte)
• Voltage Range: 2.7V - 3.6V
• Access Time: 55 nanoseconds
• Interface: Parallel
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The MX29LV800CBTI-55Q features a parallel interface with a total of 32 pins. Here is the detailed pin configuration:

1. A0 - Address Input
2. A1 - Address Input
3. A2 - Address Input
4. A3 - Address Input
5. A4 - Address Input
6. A5 - Address Input
7. A6 - Address Input
8. A7 - Address Input
9. A8 - Address Input
10. A9 - Address Input
11. A10 - Address Input
12. A11 - Address Input
13. A12 - Address Input
14. A13 - Address Input
15. A14 - Address Input
16. A15 - Address Input
17. CE# - Chip Enable Input
18. OE# - Output Enable Input
19. WE# - Write Enable Input
20. BYTE# - Byte/Word Selection Input
21. DQ0 - Data Input/Output
22. DQ1 - Data Input/Output
23. DQ2 - Data Input/Output
24. DQ3 - Data Input/Output
25. DQ4 - Data Input/Output
26. DQ5 - Data Input/Output
27. DQ6 - Data Input/Output
28. DQ7 - Data Input/Output
29. VCC - Power Supply
30. GND - Ground
31. RP# - Reset/Block Protect Input
32. WP# - Write Protect Input

Functional Features

• Erase and Program Operations: The MX29LV800CBTI-55Q supports both sector erase and byte/word programming operations, allowing flexible data manipulation.
• Block Protection: It offers block protection features to prevent accidental modification or erasure of specific memory blocks.
• Automatic Sleep Mode: This chip includes an automatic sleep mode that reduces power consumption when not in use.
• High Reliability: The MX29LV800CBTI-55Q ensures data integrity and reliability through built-in error correction mechanisms.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast access time
• Low power consumption
• Reliable data retention
• Flexible erase and program operations

Disadvantages

• Limited compatibility with certain devices due to the parallel interface
• Relatively higher cost compared to other memory technologies

Working Principles

The MX29LV800CBTI-55Q utilizes a floating gate transistor structure to store data. It employs a combination of electrical charges to represent binary information (0s and 1s). The stored data can be accessed, modified, or erased through specific control signals.

Detailed Application Field Plans

The MX29LV800CBTI-55Q is widely used in various electronic devices that require non-volatile storage, including: - Personal computers - Laptops - Smartphones - Digital cameras - Gaming consoles - Embedded systems

Detailed and Complete Alternative Models

• MX29LV400CBTI-55Q: 4 Megabit flash memory chip with similar characteristics and pin configuration.
• MX29LV160CBTI-55Q: 16 Megabit flash memory chip with similar characteristics and pin configuration.
• MX29LV320CBTI-55Q: 32 Megabit flash memory chip with similar characteristics and