MX29GL640EHT2I-70G

Product Overview

Category

The MX29GL640EHT2I-70G belongs to the category of flash memory devices.

Use

It is primarily used for data storage and retrieval in various electronic devices, such as computers, smartphones, tablets, and digital cameras.

Characteristics

• Non-volatile: The MX29GL640EHT2I-70G retains stored data even when power is turned off.
• High capacity: It offers a storage capacity of 64 megabits (8 megabytes).
• Fast access times: The device provides quick read and write speeds, allowing for efficient data transfer.
• Reliable: It has a high endurance rating and can withstand numerous read and write cycles.
• Low power consumption: The MX29GL640EHT2I-70G operates on low power, making it suitable for battery-powered devices.

Package

The MX29GL640EHT2I-70G is available in a compact surface-mount package, which facilitates easy integration into electronic circuit boards.

Essence

This flash memory device is designed to provide reliable and high-capacity storage solutions for a wide range of electronic applications.

Packaging/Quantity

The MX29GL640EHT2I-70G is typically packaged in reels or trays, with each reel or tray containing a specific quantity of devices. The exact packaging and quantity may vary depending on the manufacturer's specifications.

Specifications

• Manufacturer: Macronix International Co., Ltd.
• Part Number: MX29GL640EHT2I-70G
• Memory Type: NOR Flash
• Memory Size: 64 Megabits (8 Megabytes)
• Interface: Parallel
• Access Time: 70 nanoseconds
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The MX29GL640EHT2I-70G has a total of 48 pins, each serving a specific function. The pin configuration is as follows:

1. VCC (Power Supply)
2. A0-A18 (Address Inputs)
3. DQ0-DQ7 (Data Inputs/Outputs)
4. CE# (Chip Enable)
5. OE# (Output Enable)
6. WE# (Write Enable)
7. RP# (Reset/Ready)
8. RY/BY# (Ready/Busy)
9. BYTE# (Byte/Word Organization Selection)
10. A19-A21 (Additional Address Inputs)
11. A22-A23 (Additional Address Inputs)
12. A24-A25 (Additional Address Inputs)
13. A26-A27 (Additional Address Inputs)
14. A28-A29 (Additional Address Inputs)
15. A30-A31 (Additional Address Inputs)
16. A32-A33 (Additional Address Inputs)
17. A34-A35 (Additional Address Inputs)
18. A36-A37 (Additional Address Inputs)
19. A38-A39 (Additional Address Inputs)
20. A40-A41 (Additional Address Inputs)
21. A42-A43 (Additional Address Inputs)
22. A44-A45 (Additional Address Inputs)
23. A46-A47 (Additional Address Inputs)
24. NC (No Connection)
25. GND (Ground)

Note: The detailed pin configuration may vary depending on the specific package variant.

Functional Features

• Erase and Program Operations: The MX29GL640EHT2I-70G supports both sector erase and byte programming operations, allowing for flexible data manipulation.
• Block Locking: It offers the ability to lock specific memory blocks, preventing accidental modification or erasure.
• Read Modes: The device supports various read modes, including random access and continuous burst read, enabling efficient data retrieval.
• Error Correction: The MX29GL640EHT2I-70G incorporates error correction techniques to ensure data integrity during read and write operations.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast access times
• Low power consumption
• Reliable and durable
• Flexible erase and program operations

Disadvantages

• Limited compatibility with certain older devices that do not support parallel interfaces
• Relatively higher cost compared to lower-capacity flash memory options

Working Principles

The MX29GL640EHT2I-70G utilizes NOR flash memory technology. It stores data in a grid of memory cells, where each cell represents a bit of information. These cells can be electrically programmed and erased, allowing for data storage and modification. The device operates by applying specific voltage levels to the appropriate pins, enabling read, write, and erase operations.

Detailed Application Field Plans

The MX29GL640EHT2I-70G finds applications in various electronic devices and systems, including but not limited to: