MX29GL512GDT2I-11G

Product Overview

Category

MX29GL512GDT2I-11G belongs to the category of flash memory chips.

Use

It is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and portable media players.

Characteristics

• Non-volatile memory: Retains data even when power is turned off.
• High capacity: Offers a storage capacity of 512 gigabits (64 gigabytes).
• High-speed data transfer: Enables fast read and write operations.
• Reliable performance: Ensures data integrity and durability.
• Compact package: Comes in a small form factor suitable for integration into compact devices.

Package and Quantity

MX29GL512GDT2I-11G is typically packaged in a surface-mount technology (SMT) package. The exact package type may vary depending on the manufacturer. It is commonly available in reels or trays containing multiple units.

Specifications

• Memory Type: NAND Flash
• Organization: 512Gb x 1
• Voltage Supply: 2.7V - 3.6V
• Interface: Parallel
• Access Time: 110 ns
• Operating Temperature: -40°C to +85°C
• Package Type: TSOP48

Pin Configuration

The MX29GL512GDT2I-11G chip has a total of 48 pins arranged in a TSOP package. The pin configuration is as follows:

1. VCC
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. A16
19. A17
20. A18
21. A19
22. A20
23. A21
24. A22
25. A23
26. A24
27. A25
28. A26
29. A27
30. A28
31. A29
32. A30
33. A31
34. DQ0
35. DQ1
36. DQ2
37. DQ3
38. DQ4
39. DQ5
40. DQ6
41. DQ7
42. WE#
43. CE#
44. RE#
45. WP#
46. RY/BY#
47. VSS
48. VCC

Functional Features

• Erase and Program Operations: Allows for data erasure and programming at the block level.
• Block Locking: Provides the ability to protect specific blocks from being erased or programmed.
• Read and Write Operations: Enables high-speed reading and writing of data.
• Error Correction Code (ECC): Incorporates ECC algorithms to ensure data integrity.
• Wear Leveling: Distributes write operations evenly across memory cells to extend chip lifespan.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast data transfer rates
• Compact form factor
• Reliable performance
• Block locking feature for enhanced security

Disadvantages

• Limited endurance: Flash memory has a finite number of erase/write cycles.
• Relatively higher cost compared to other types of memory.

Working Principles

MX29GL512GDT2I-11G utilizes NAND flash memory technology. It stores data in a series of memory cells organized in a grid-like structure. Each cell can store multiple bits of information using a combination of voltage levels. The data can be read, written, and erased electronically.

Detailed Application Field Plans

MX29GL512GDT2I-11G finds applications in various electronic devices that require high-capacity data storage. Some of the key application fields include: - Smartphones and tablets - Digital cameras - Portable media players - Solid-state drives (SSDs) - Industrial control systems - Automotive electronics

Alternative Models

• MX29GL256GDT2I-11G: 256Gb capacity variant of the same flash memory chip.
• MX29GL1GDT2I-11G: 1Tb capacity variant of the same flash memory chip.
• MX29GL512GDT2I-12G: Similar flash memory chip with a different access time.

Note: This is not an exhaustive list, and there may be other alternative models available from different manufacturers.

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