ICE65P04F-TCB284C

Product Overview

Category

The ICE65P04F-TCB284C belongs to the category of power MOSFETs.

Use

This product is commonly used in electronic circuits for power management applications.

Characteristics

• Low on-resistance
• High current handling capability
• Fast switching speed
• Low gate charge
• Low leakage current

Package

The ICE65P04F-TCB284C is available in a TO-263 package, also known as D2PAK or SMD-220.

Essence

This power MOSFET is designed to efficiently control and regulate power flow in electronic devices.

Packaging/Quantity

The ICE65P04F-TCB284C is typically packaged in reels containing 500 units.

Specifications

• Drain-Source Voltage (VDS): 60V
• Continuous Drain Current (ID): 65A
• Gate-Source Voltage (VGS): ±20V
• On-Resistance (RDS(ON)): 4mΩ (max) at VGS = 10V, ID = 32A
• Total Gate Charge (Qg): 70nC (typ)
• Input Capacitance (Ciss): 4000pF (typ)
• Output Capacitance (Coss): 600pF (typ)
• Reverse Transfer Capacitance (Crss): 300pF (typ)

Detailed Pin Configuration

The ICE65P04F-TCB284C has three pins:

1. Drain (D): This pin is connected to the positive terminal of the load.
2. Source (S): This pin is connected to the negative terminal of the load and the ground.
3. Gate (G): This pin controls the switching behavior of the MOSFET.

Functional Features

• Low power dissipation
• High efficiency
• Enhanced thermal performance
• Overcurrent and overtemperature protection
• Fast switching capability

Advantages and Disadvantages

Advantages

• Low on-resistance reduces power losses
• High current handling capability enables use in high-power applications
• Fast switching speed allows for efficient power regulation
• Low gate charge minimizes drive requirements
• Low leakage current enhances overall system performance

Disadvantages

• Relatively large package size may limit usage in space-constrained designs
• Higher cost compared to other power MOSFETs with lower specifications

Working Principles

The ICE65P04F-TCB284C operates based on the principle of field-effect transistors. When a suitable voltage is applied to the gate terminal, it creates an electric field that controls the flow of current between the drain and source terminals. By adjusting the gate voltage, the MOSFET can be turned on or off, allowing or blocking the flow of power through the device.

Detailed Application Field Plans

The ICE65P04F-TCB284C finds extensive application in various fields, including:

1. Power supplies: Used in switch-mode power supplies for efficient power conversion.
2. Motor control: Enables precise control of motor speed and direction in industrial and automotive applications.
3. LED lighting: Facilitates efficient power management in LED lighting systems.
4. Audio amplifiers: Provides high-current handling capability for audio amplification circuits.
5. Battery charging: Used in battery charging circuits to regulate power flow.

Detailed and Complete Alternative Models

1. ICE65P06F-TCB284C: Similar to ICE65P04F-TCB284C but with a higher drain-source voltage rating of 60V.
2. ICE65P03F-TCB284C: Lower on-resistance (2.5mΩ) and higher continuous drain current (75A) compared to ICE65P04F-TCB284C.
3. ICE65P02F-TCB284C: Lower on-resistance (1.8mΩ) and higher continuous drain current (90A) compared to ICE65P04F-TCB284C.

In conclusion, the ICE65P04F-TCB284C power MOSFET offers excellent performance characteristics for power management applications. Its low on-resistance, high current handling capability, and fast switching speed make it a reliable choice for various electronic circuits. However, its relatively large package size and higher cost should be considered when selecting alternative models.