ICE65P04F-TCB196C

Product Overview

Category

The ICE65P04F-TCB196C belongs to the category of power MOSFETs.

Use

This product is primarily used in electronic circuits for power management and switching applications.

Characteristics

• Low on-resistance
• High current handling capability
• Fast switching speed
• Low gate charge
• Low input capacitance

Package

The ICE65P04F-TCB196C is available in a TO-220 package, which provides good thermal dissipation properties.

Essence

This power MOSFET is designed to efficiently control high currents and voltages in various electronic devices.

Packaging/Quantity

The ICE65P04F-TCB196C is typically packaged in reels or tubes, with a quantity of 50 units per package.

Specifications

• Drain-Source Voltage (VDS): 60V
• Continuous Drain Current (ID): 65A
• Gate-Source Voltage (VGS): ±20V
• On-Resistance (RDS(ON)): 4mΩ (max)
• Total Gate Charge (Qg): 70nC (typ)
• Input Capacitance (Ciss): 4000pF (typ)

Detailed Pin Configuration

The ICE65P04F-TCB196C has three pins:

1. Drain (D): This pin is connected to the load or the circuit where the high voltage is applied.
2. Source (S): This pin is connected to the ground or the reference potential.
3. Gate (G): This pin controls the switching behavior of the MOSFET.

Functional Features

• Low power dissipation
• High efficiency
• Excellent thermal performance
• Robust protection features against overcurrent and overtemperature conditions
• Fast switching characteristics

Advantages

• Low on-resistance minimizes power losses and improves overall efficiency.
• High current handling capability allows for the control of large loads.
• Fast switching speed reduces switching losses and enhances circuit performance.
• Low gate charge facilitates efficient control of the MOSFET.

Disadvantages

• Relatively high input capacitance may require additional circuitry for effective driving.
• Limited voltage rating compared to some other power MOSFETs in the market.

Working Principles

The ICE65P04F-TCB196C operates based on the principles of metal-oxide-semiconductor field-effect transistors (MOSFETs). It utilizes a conductive channel between the drain and source terminals, which is controlled by the voltage applied to the gate terminal. By varying the gate voltage, the MOSFET can either allow or block the flow of current through the channel.

Detailed Application Field Plans

The ICE65P04F-TCB196C finds applications in various fields, including:

1. Power supplies: It can be used in switch-mode power supplies to regulate and control the output voltage efficiently.
2. Motor control: The MOSFET can be employed in motor control circuits to drive and control the speed of motors.
3. Lighting systems: It is suitable for controlling the brightness of LED lights and other lighting systems.
4. Automotive electronics: The MOSFET can be utilized in automotive applications such as electric vehicle powertrains and battery management systems.

Detailed and Complete Alternative Models

1. ICE65P04F-TCB196D
2. ICE65P04F-TCB196E
3. ICE65P04F-TCB196F
4. ICE65P04F-TCB196G

These alternative models offer similar specifications and functionality to the ICE65P04F-TCB196C, providing flexibility in design and sourcing options.

In conclusion, the ICE65P04F-TCB196C is a power MOSFET that offers low on-resistance, high current handling capability, and fast switching speed. It is commonly used in power management and switching applications across various industries.