IXYH30N65C3

Product Overview

The IXYH30N65C3 belongs to the category of power semiconductor devices and is commonly used in electronic circuits for power control and conversion. This device exhibits characteristics such as high voltage capability, low on-state resistance, and fast switching speed. It is typically packaged in a TO-247 package and is available in various quantities.

Specifications

• Voltage Rating: 650V
• Current Rating: 30A
• Package Type: TO-247
• Switching Speed: <100ns
• On-State Resistance: <0.2Ω

Detailed Pin Configuration

The IXYH30N65C3 typically features three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

• High voltage capability
• Low on-state resistance
• Fast switching speed
• Robust construction

Advantages and Disadvantages

Advantages

• Efficient power control
• Suitable for high voltage applications
• Fast response time

Disadvantages

• Higher cost compared to lower voltage devices
• Requires careful handling due to high voltage ratings

Working Principles

The IXYH30N65C3 operates based on the principles of field-effect transistors (FETs), where the gate voltage controls the flow of current between the drain and source terminals. When a suitable voltage is applied to the gate, the device allows current to flow through, enabling power control and conversion.

Detailed Application Field Plans

The IXYH30N65C3 finds extensive use in the following applications: - Switched-mode power supplies - Motor drives - Inverters - Power factor correction circuits

Detailed and Complete Alternative Models

Some alternative models to the IXYH30N65C3 include: - IXFN30N65X3 - IRF30N65K - STW30N65M5

In conclusion, the IXYH30N65C3 is a high-voltage power semiconductor device with fast switching characteristics, making it suitable for various power control and conversion applications.

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