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IXTH180N085T

IXTH180N085T

Product Overview

Category

The IXTH180N085T belongs to the category of power MOSFETs.

Use

It is commonly used in applications requiring high power switching and efficient energy management.

Characteristics

  • High voltage capability
  • Low on-resistance
  • Fast switching speed
  • High reliability

Package

The IXTH180N085T is typically available in a TO-247 package.

Essence

This MOSFET is essential for power electronics and energy conversion applications.

Packaging/Quantity

It is usually packaged individually and quantities may vary based on supplier and customer requirements.

Specifications

  • Voltage Rating: 850V
  • Current Rating: 180A
  • On-Resistance: 0.085Ω
  • Gate-Source Voltage (Max): ±20V
  • Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

The pin configuration of the IXTH180N085T typically includes the gate, drain, and source terminals, as per the standard MOSFET pinout.

Functional Features

  • High voltage capability enables use in high-power applications.
  • Low on-resistance minimizes power losses and improves efficiency.
  • Fast switching speed allows for rapid control of power flow.

Advantages

  • Suitable for high voltage applications
  • Low conduction losses
  • Enhanced thermal performance

Disadvantages

  • Higher cost compared to lower voltage MOSFETs
  • Gate drive requirements may be more stringent

Working Principles

The IXTH180N085T operates based on the principles of field-effect transistors, utilizing the electric field at the gate terminal to control the flow of current between the drain and source terminals.

Detailed Application Field Plans

The IXTH180N085T is widely used in various applications including: - Switched-mode power supplies - Motor drives - Renewable energy systems - Electric vehicles

Detailed and Complete Alternative Models

Some alternative models to the IXTH180N085T include: - IRFP4668PbF - FDPF33N25T - STW45NM50FD

In conclusion, the IXTH180N085T power MOSFET offers high voltage capability, low on-resistance, and fast switching speed, making it suitable for a wide range of power electronics applications.

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技術ソリューションにおける IXTH180N085T の適用に関連する 10 件の一般的な質問と回答をリストします。

  1. What is IXTH180N085T?

    • IXTH180N085T is a high voltage power MOSFET designed for various technical applications requiring efficient power management.
  2. What is the maximum voltage rating of IXTH180N085T?

    • The maximum voltage rating of IXTH180N085T is 850V, making it suitable for high voltage applications.
  3. What is the maximum current rating of IXTH180N085T?

    • The maximum continuous drain current rating of IXTH180N085T is typically 180A, allowing it to handle high power loads.
  4. What are the typical applications of IXTH180N085T?

    • IXTH180N085T is commonly used in applications such as motor control, power supplies, and inverters due to its high voltage and current capabilities.
  5. What is the on-resistance of IXTH180N085T?

    • The on-resistance of IXTH180N085T is typically low, enabling efficient power dissipation and minimizing conduction losses.
  6. Does IXTH180N085T require a heat sink?

    • Depending on the application and power dissipation requirements, the use of a heat sink may be necessary to maintain safe operating temperatures.
  7. Is IXTH180N085T suitable for automotive applications?

    • Yes, IXTH180N085T is designed to meet automotive quality and reliability standards, making it suitable for automotive power systems.
  8. What is the gate threshold voltage of IXTH180N085T?

    • The gate threshold voltage of IXTH180N085T is typically low, allowing for easy and efficient gate control.
  9. Can IXTH180N085T be used in parallel to increase current handling capability?

    • Yes, IXTH180N085T can be used in parallel to increase the overall current handling capability in high-power applications.
  10. What are the key advantages of using IXTH180N085T in technical solutions?

    • The key advantages of using IXTH180N085T include high voltage capability, low on-resistance, automotive suitability, and potential for parallel operation to handle high currents.