Category: Power Semiconductor
Use: High power switching applications
Characteristics: High voltage, high current, fast switching speed
Package: TO-268
Essence: Insulated Gate Bipolar Transistor (IGBT)
Packaging/Quantity: Single unit
IXGT28N120B is an IGBT designed to handle high power switching applications. It operates by controlling the flow of current between the collector and emitter using the gate signal. When the gate signal is applied, the IGBT allows a high current to flow, and when the gate signal is removed, the current flow ceases.
This concludes the entry for IXGT28N120B, covering its product details, specifications, features, advantages, disadvantages, working principles, application field plans, and alternative models.
What is the maximum voltage rating of IXGT28N120B?
What is the maximum current rating of IXGT28N120B?
What type of package does IXGT28N120B come in?
What are the typical applications of IXGT28N120B?
What is the on-state voltage of IXGT28N120B?
Does IXGT28N120B have built-in protection features?
What is the operating temperature range of IXGT28N120B?
Is IXGT28N120B suitable for high-frequency switching applications?
Can IXGT28N120B be used in parallel configurations for higher current handling?
Are there any specific layout considerations when using IXGT28N120B in a circuit?