IXFX12N90Q

Product Overview

Use

It is used for high-power switching applications in various electronic circuits and systems.

Characteristics

High voltage capability
Low on-resistance
Fast switching speed
Low gate charge

Package

The IXFX12N90Q is typically available in a TO-220 package.

Essence

This MOSFET is essential for efficient power management and control in electronic devices and systems.

Packaging/Quantity

It is commonly packaged in reels or tubes, with quantities varying based on supplier and customer requirements.

Specifications

Voltage Rating: 900V
Current Rating: 12A
On-Resistance: 0.65Ω
Gate Charge: 40nC
Operating Temperature: -55°C to 150°C

Detailed Pin Configuration

The IXFX12N90Q typically has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

High voltage capability allows for use in high-power applications.
Low on-resistance minimizes power loss and heat generation.
Fast switching speed enables efficient control of power flow.

Advantages

Suitable for high-power applications
Low power dissipation
Fast switching speed

Disadvantages

Higher cost compared to lower-rated MOSFETs
Requires careful handling due to high voltage capability

Working Principles

The IXFX12N90Q operates based on the principles of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals.

Detailed Application Field Plans

The IXFX12N90Q is commonly used in the following applications: - Switched-mode power supplies - Motor control systems - Inverters and converters - Electronic ballasts

Detailed and Complete Alternative Models

Some alternative models to the IXFX12N90Q include: - IRFP460: Similar voltage and current ratings - FDPF12N60NZ: Lower voltage rating but similar current capacity - STW12NK90Z: Comparable specifications and performance

In conclusion, the IXFX12N90Q is a high-voltage power MOSFET with excellent characteristics suitable for various high-power switching applications. Its fast switching speed, low on-resistance, and high voltage capability make it an ideal choice for efficient power management and control in electronic systems.

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