IXYS
画像はイメージの場合もございます。
商品詳細は仕様をご覧ください。
IXFN21N100Q
詳細を表示 DataSheets

IXFN21N100Q

Product Overview

  • Category: Power MOSFET
  • Use: High power switching applications
  • Characteristics: High voltage, high current capability, low on-resistance
  • Package: TO-264
  • Essence: Efficient power management
  • Packaging/Quantity: Available in reels of 500 units

Specifications

  • Voltage Rating: 1000V
  • Current Rating: 21A
  • On-Resistance: 0.21Ω
  • Gate Charge: 110nC
  • Operating Temperature: -55°C to 150°C

Detailed Pin Configuration

The IXFN21N100Q features a standard TO-264 pin configuration with the following pinout: 1. Gate 2. Drain 3. Source

Functional Features

  • Low gate charge for fast switching
  • Low on-resistance for reduced power dissipation
  • High voltage rating for robust performance

Advantages and Disadvantages

Advantages

  • High voltage and current capability
  • Low on-resistance for efficient power handling
  • Fast switching speed

Disadvantages

  • Higher gate charge compared to some alternative models
  • Relatively higher cost compared to lower-rated MOSFETs

Working Principles

The IXFN21N100Q operates based on the principles of field-effect transistors, utilizing its gate, drain, and source terminals to control the flow of current in high-power circuits.

Detailed Application Field Plans

The IXFN21N100Q is suitable for a wide range of high-power applications, including: - Switch-mode power supplies - Motor drives - Inverters - Welding equipment - Inductive heating systems

Detailed and Complete Alternative Models

Some alternative models to the IXFN21N100Q include: - IRFP4668PbF - STW20NK50Z - FDPF33N25T

In conclusion, the IXFN21N100Q is a high-voltage, high-current MOSFET designed for efficient power management in various high-power applications. Its characteristics, specifications, and functional features make it a reliable choice for demanding power electronics designs.

[Word Count: 274]

技術ソリューションにおける IXFN21N100Q の適用に関連する 10 件の一般的な質問と回答をリストします。

  1. What is IXFN21N100Q?

    • IXFN21N100Q is a high power MOSFET designed for various technical solutions requiring efficient power management.

  2. What is the maximum voltage rating of IXFN21N100Q?

    • The maximum voltage rating of IXFN21N100Q is 1000V, making it suitable for high voltage applications.

  3. What is the maximum current rating of IXFN21N100Q?

    • The maximum current rating of IXFN21N100Q is 21A, allowing it to handle high current loads.

  4. What are the typical applications of IXFN21N100Q?

    • IXFN21N100Q is commonly used in motor control, power supplies, inverters, and other high-power electronic systems.

  5. What is the on-state resistance of IXFN21N100Q?

    • The on-state resistance of IXFN21N100Q is typically low, enabling efficient power transfer and minimizing losses.

  6. Is IXFN21N100Q suitable for switching applications?

    • Yes, IXFN21N100Q is well-suited for switching applications due to its fast switching speed and high voltage capability.

  7. Does IXFN21N100Q require a heat sink?

    • Depending on the application and power dissipation, IXFN21N100Q may require a heat sink to maintain optimal operating temperatures.

  8. Can IXFN21N100Q be used in parallel configurations?

    • Yes, IXFN21N100Q can be used in parallel configurations to increase current handling capacity and distribute load evenly.

  9. What protection features does IXFN21N100Q offer?

    • IXFN21N100Q typically includes overcurrent protection, overtemperature protection, and other safety features to ensure reliable operation.

  10. Where can I find the detailed datasheet for IXFN21N100Q?

    • The detailed datasheet for IXFN21N100Q can be found on the manufacturer's website or by contacting their technical support team.