IXFK100N65X2
Product Overview
Category: Power MOSFET
Use: High-power switching applications
Characteristics: High voltage, high current, low on-resistance
Package: TO-264
Essence: Power semiconductor device for efficient power management
Packaging/Quantity: Single unit packaging
Specifications
- Voltage Rating: 650V
- Current Rating: 100A
- On-Resistance: 0.065Ω
- Gate Threshold Voltage: 4V
- Gate Charge (Typical): 180nC
- Operating Temperature Range: -55°C to 150°C
Detailed Pin Configuration
- Gate (G)
- Drain (D)
- Source (S)
Functional Features
- Low on-resistance for high efficiency
- Fast switching speed for improved performance
- Robust design for reliable operation in harsh conditions
- Low gate charge for reduced drive requirements
Advantages and Disadvantages
Advantages: - High voltage and current handling capability - Low on-resistance for minimal power loss - Wide operating temperature range
Disadvantages: - Higher gate threshold voltage compared to some alternatives - Larger package size may limit use in space-constrained applications
Working Principles
The IXFK100N65X2 operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the conductivity of the semiconductor material. When a sufficient gate voltage is applied, the device allows a high current to flow between the drain and source terminals with minimal resistance.
Detailed Application Field Plans
The IXFK100N65X2 is well-suited for various high-power switching applications, including: - Motor drives - Power supplies - Renewable energy systems - Electric vehicles - Industrial automation
Detailed and Complete Alternative Models
- IXFK120N65X2: Similar specifications with slightly higher current rating
- IXFK90N65X2: Similar specifications with slightly lower on-resistance
- IXFK100N60X2: Lower voltage rating with similar current handling capacity
This comprehensive entry provides an in-depth understanding of the IXFK100N65X2, covering its product details, features, advantages, disadvantages, working principles, application field plans, and alternative models.
技術ソリューションにおける IXFK100N65X2 の適用に関連する 10 件の一般的な質問と回答をリストします。
Question: What is the maximum drain-source voltage of IXFK100N65X2?
Answer: The maximum drain-source voltage of IXFK100N65X2 is 650V.Question: What is the continuous drain current rating of IXFK100N65X2?
Answer: The continuous drain current rating of IXFK100N65X2 is 100A.Question: Can IXFK100N65X2 be used in high-frequency switching applications?
Answer: Yes, IXFK100N65X2 is suitable for high-frequency switching due to its low gate charge and intrinsic diode with low reverse recovery.Question: What is the typical on-resistance of IXFK100N65X2?
Answer: The typical on-resistance of IXFK100N65X2 is 0.065 ohms.Question: Is IXFK100N65X2 suitable for use in power supplies and inverters?
Answer: Yes, IXFK100N65X2 is commonly used in power supplies, inverters, and motor control applications.Question: Does IXFK100N65X2 have built-in protection features?
Answer: IXFK100N65X2 has built-in overcurrent and thermal protection, making it reliable in demanding applications.Question: What is the operating temperature range of IXFK100N65X2?
Answer: IXFK100N65X2 can operate within a temperature range of -55°C to 150°C.Question: Can IXFK100N65X2 be used in parallel to increase current handling capability?
Answer: Yes, IXFK100N65X2 can be used in parallel to increase current handling capability in high-power applications.Question: What are the recommended gate drive voltage and current for IXFK100N65X2?
Answer: The recommended gate drive voltage is typically 10V, and the gate drive current should be sufficient to ensure fast switching.Question: Are there any application notes or reference designs available for using IXFK100N65X2 in technical solutions?
Answer: Yes, the manufacturer provides application notes and reference designs to assist in the proper integration of IXFK100N65X2 in various technical solutions.