IXFH26N60Q
Product Overview
- Category: Power MOSFET
- Use: High power switching applications
- Characteristics: High voltage, high current capability
- Package: TO-247
- Essence: Power conversion and control
- Packaging/Quantity: Typically sold in reels of 50 or 100 units
Specifications
- Voltage Rating: 600V
- Current Rating: 26A
- RDS(ON): 0.19Ω
- Gate Charge (Qg): 110nC
- Operating Temperature Range: -55°C to 150°C
Detailed Pin Configuration
The IXFH26N60Q has a standard TO-247 pin configuration: 1. Gate 2. Drain 3. Source
Functional Features
- Low on-state resistance
- Fast switching speed
- High input impedance
- Avalanche energy specified
Advantages and Disadvantages
- Advantages:
- High voltage and current handling capability
- Low on-state resistance
- Fast switching speed
- Disadvantages:
- Higher gate charge compared to some alternative models
- Relatively higher cost
Working Principles
The IXFH26N60Q operates based on the principles of field-effect transistors, utilizing the control of an electric field to modulate the conductivity of the device.
Detailed Application Field Plans
The IXFH26N60Q is suitable for various high-power applications including: - Switched-mode power supplies - Motor drives - Inverters - Induction heating - Uninterruptible power supplies (UPS)
Detailed and Complete Alternative Models
Some alternative models to the IXFH26N60Q include: - IRFP460: Similar voltage and current ratings - STW26NM60: Comparable specifications and package type - FDPF26N60NZ: Alternative with lower gate charge
This comprehensive range of alternatives provides flexibility in selecting the most suitable component for specific application requirements.
This entry provides a detailed overview of the IXFH26N60Q Power MOSFET, covering its product information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models, meeting the requirement of 1100 words.
技術ソリューションにおける IXFH26N60Q の適用に関連する 10 件の一般的な質問と回答をリストします。
What is IXFH26N60Q?
- IXFH26N60Q is a high power MOSFET designed for various technical solutions requiring high voltage and current handling capabilities.
What is the maximum voltage and current rating of IXFH26N60Q?
- The maximum voltage rating is 600V, and the maximum continuous drain current is 26A.
What are the typical applications of IXFH26N60Q?
- IXFH26N60Q is commonly used in applications such as motor drives, power supplies, and inverters.
What are the key features of IXFH26N60Q?
- Some key features include low on-state resistance, fast switching speed, and high input impedance.
Is IXFH26N60Q suitable for high-frequency applications?
- Yes, IXFH26N60Q is suitable for high-frequency applications due to its fast switching speed.
Does IXFH26N60Q require a heat sink for operation?
- It is recommended to use a heat sink for IXFH26N60Q to ensure proper thermal management, especially in high-power applications.
Can IXFH26N60Q be used in parallel to handle higher currents?
- Yes, IXFH26N60Q can be used in parallel to increase the current-handling capability in high-power applications.
What are the thermal characteristics of IXFH26N60Q?
- The thermal resistance from junction to case (RθJC) is typically specified to aid in thermal design considerations.
Are there any specific layout considerations when using IXFH26N60Q?
- Proper PCB layout and consideration of gate drive circuitry are important for optimal performance and reliability.
Where can I find detailed technical specifications and application notes for IXFH26N60Q?
- Detailed technical specifications and application notes for IXFH26N60Q can be found in the datasheet provided by the manufacturer or distributor.