IXFH21N50Q

Product Overview

The IXFH21N50Q belongs to the category of power MOSFETs and is commonly used in electronic circuits for switching and amplification. This MOSFET is characterized by its high voltage and current handling capabilities, making it suitable for various power applications. The package typically consists of a TO-247, which provides efficient thermal dissipation. The essence of the IXFH21N50Q lies in its ability to handle high power levels while maintaining low on-state resistance. It is usually packaged individually and comes in varying quantities depending on the manufacturer's specifications.

Specifications

• Voltage Rating: 500V
• Current Rating: 21A
• Package Type: TO-247
• On-State Resistance: 0.19Ω
• Gate Threshold Voltage: 4V
• Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The IXFH21N50Q follows the standard pin configuration for a TO-247 package: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

• High voltage and current handling capacity
• Low on-state resistance
• Efficient thermal dissipation due to TO-247 package
• Fast switching speed

Advantages and Disadvantages

Advantages

• Suitable for high-power applications
• Low conduction losses
• Enhanced thermal performance

Disadvantages

• Higher cost compared to lower-rated MOSFETs
• Requires careful consideration of driving circuitry due to high gate threshold voltage

Working Principles

The IXFH21N50Q operates based on the principles of field-effect transistors, where the flow of current between the drain and source terminals is controlled by the voltage applied to the gate terminal. When a sufficient voltage is applied to the gate, the MOSFET allows current to flow through, enabling power switching and amplification.

Detailed Application Field Plans

The IXFH21N50Q finds extensive use in various power electronics applications, including: - Switch-mode power supplies - Motor control systems - Inverters and converters - Audio amplifiers - LED lighting systems

Detailed and Complete Alternative Models

• IRFP460: Similar voltage and current ratings
• FDPF33N25: Lower voltage rating but similar current handling capacity
• STW20NB50: Comparable specifications with different packaging options

In conclusion, the IXFH21N50Q power MOSFET offers high-performance characteristics suitable for demanding power applications, albeit at a higher cost. Its robust design and functional features make it a preferred choice for engineers working on high-power electronic systems.

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