IXDH30N120D1

Product Overview

• Category: Power semiconductor device
• Use: High-power switching applications
• Characteristics: High current capability, low on-state voltage, fast switching speed
• Package: TO-247
• Essence: Efficient power control and management
• Packaging/Quantity: Single unit packaging

Specifications

• Voltage Rating: 1200V
• Current Rating: 30A
• Package Type: TO-247
• Gate-Source Voltage (Max): ±20V
• On-State Voltage (Max): 1.7V
• Reverse Recovery Time: 50ns

Detailed Pin Configuration

The IXDH30N120D1 has a standard TO-247 pin configuration with three pins: gate, drain, and source.

Functional Features

• High current capability for power applications
• Low on-state voltage for reduced power loss
• Fast switching speed for efficient operation

Advantages and Disadvantages

Advantages

• High current rating
• Low on-state voltage
• Fast switching speed

Disadvantages

• Higher reverse recovery time compared to some alternative models

Working Principles

The IXDH30N120D1 operates based on the principles of field-effect transistors, utilizing its high current capability and low on-state voltage to efficiently control power flow in high-power switching applications.

Detailed Application Field Plans

The IXDH30N120D1 is suitable for various high-power applications, including: - Motor drives - Renewable energy systems - Power supplies - Industrial automation

Detailed and Complete Alternative Models

Some alternative models to IXDH30N120D1 include: - IXYS IXFN30N120Q2 - Infineon IGBT30N120H3

In conclusion, the IXDH30N120D1 is a high-power semiconductor device with a voltage rating of 1200V and a current rating of 30A. Its characteristics include high current capability, low on-state voltage, and fast switching speed, making it suitable for various high-power switching applications such as motor drives, renewable energy systems, and power supplies.

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