IS66WVE4M16ALL-7010BLI-TR

Product Overview

Category

IS66WVE4M16ALL-7010BLI-TR belongs to the category of memory products.

Use

This product is primarily used for storing and retrieving digital information in electronic devices.

Characteristics

• High storage capacity
• Fast data access speed
• Low power consumption
• Compact package size
• Reliable performance

Package

IS66WVE4M16ALL-7010BLI-TR is available in a small form factor package, designed to fit into various electronic devices seamlessly.

Essence

The essence of IS66WVE4M16ALL-7010BLI-TR lies in its ability to provide efficient and reliable memory storage for electronic devices.

Packaging/Quantity

This product is typically packaged in reels or trays, with a specific quantity per package depending on the manufacturer's specifications.

Specifications

• Memory Type: Static Random Access Memory (SRAM)
• Capacity: 4 Megabits (4Mbit)
• Organization: 4M x 16 bits
• Supply Voltage: 2.5V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Retention: More than 20 years
• Package Type: Ball Grid Array (BGA)
• Pin Count: 48 pins

Detailed Pin Configuration

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. DQ8
11. DQ9
12. DQ10
13. DQ11
14. DQ12
15. DQ13
16. DQ14
17. DQ15
18. VSS
19. /CE1
20. /CE2
21. /OE
22. /WE
23. A0
24. A1
25. A2
26. A3
27. A4
28. A5
29. A6
30. A7
31. A8
32. A9
33. A10
34. A11
35. A12
36. A13
37. A14
38. A15
39. NC
40. NC
41. NC
42. NC
43. NC
44. NC
45. NC
46. NC
47. NC
48. VDDQ

Functional Features

• High-speed data access
• Asynchronous operation
• Low power consumption in standby mode
• Easy integration into various electronic systems
• Multiple chip enable and output enable options for flexible control

Advantages and Disadvantages

Advantages

• Fast data access speed enhances overall system performance.
• Low power consumption helps prolong battery life in portable devices.
• Compact package size allows for space-efficient design.
• Reliable performance ensures data integrity.

Disadvantages

• Limited storage capacity compared to other memory technologies.
• Higher cost per bit compared to some alternative memory solutions.
• Sensitivity to environmental conditions, such as temperature and voltage fluctuations.

Working Principles

IS66WVE4M16ALL-7010BLI-TR operates based on the principles of static random access memory (SRAM). It stores digital information using flip-flops, which retain their state as long as power is supplied. The stored data can be accessed randomly, allowing for fast read and write operations.

Detailed Application Field Plans

IS66WVE4M16ALL-7010BLI-TR finds applications in various electronic devices, including but not limited to: - Mobile phones - Tablets - Digital cameras - Networking equipment - Industrial control systems

Detailed and Complete Alternative Models

1. IS66WVE4M16BLL-7010BLI-TR
2. IS66WVE4M16BLL-7010BLI-TRT
3. IS66WVE4M16BLL-7010BLI-TRL
4. IS66WVE4M16BLL-7010BLI-TRLT

These alternative models offer similar specifications and functionality, providing options for different design requirements.

In conclusion, IS66WVE4M16ALL-7010BLI-TR is a memory product that offers high-speed data access, low power consumption, and reliable performance. Its compact package size makes it suitable for integration into various electronic devices. While it has limitations in terms of storage capacity and cost per bit, it serves as a valuable memory solution in applications such as mobile phones, tablets, and industrial control systems. Alternative models are available to cater to specific design