IS65WV25616BLL-70TLA3-TR

Product Overview

Category

IS65WV25616BLL-70TLA3-TR belongs to the category of high-speed synchronous dynamic random-access memory (SDRAM) chips.

Use

This product is primarily used in computer systems, servers, and other electronic devices that require fast and efficient data storage and retrieval.

Characteristics

• High-speed operation: The IS65WV25616BLL-70TLA3-TR offers fast data transfer rates, allowing for quick access to stored information.
• Large storage capacity: With a capacity of 256 megabits, this SDRAM chip can store a significant amount of data.
• Low power consumption: The chip is designed to operate efficiently, minimizing power usage and extending battery life in portable devices.
• Reliable performance: It provides reliable and stable performance, ensuring data integrity and system stability.

Package

The IS65WV25616BLL-70TLA3-TR comes in a small outline, thin profile (TSOP) package. This package type is commonly used for surface mount applications, making it suitable for modern electronic devices.

Essence

The essence of the IS65WV25616BLL-70TLA3-TR lies in its ability to provide high-speed and reliable data storage and retrieval, contributing to the overall performance and efficiency of electronic systems.

Packaging/Quantity

The IS65WV25616BLL-70TLA3-TR is typically packaged in reels or trays, with each reel or tray containing a specific quantity of chips. The exact packaging and quantity may vary depending on the manufacturer's specifications.

Specifications

• Memory Type: Synchronous DRAM (SDRAM)
• Organization: 32M words x 16 bits
• Data Rate: 70ns (nanoseconds)
• Supply Voltage: 3.3V
• Interface: Parallel
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The IS65WV25616BLL-70TLA3-TR has a total of 54 pins, each serving a specific function. The pin configuration is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. DQ8
11. DQ9
12. DQ10
13. DQ11
14. DQ12
15. DQ13
16. DQ14
17. DQ15
18. A0
19. A1
20. A2
21. A3
22. A4
23. A5
24. A6
25. A7
26. A8
27. A9
28. A10
29. A11
30. A12
31. A13
32. A14
33. A15
34. /CAS
35. /RAS
36. /WE
37. /CS
38. /CKE
39. /BA0
40. /BA1
41. /A16
42. /A17
43. /A18
44. /A19
45. /A20
46. /A21
47. /A22
48. /A23
49. /A24
50. /A25
51. VSS
52. NC
53. VDDQ
54. VSSQ

Functional Features

• Burst Mode: The IS65WV25616BLL-70TLA3-TR supports burst mode operation, allowing for consecutive data transfers without the need for individual commands.
• Auto Precharge: This feature automatically precharges the memory cells after a read or write operation, optimizing performance and reducing power consumption.
• Self-Refresh: The chip has a self-refresh mode that allows it to retain data even when not actively powered, making it suitable for low-power applications.

Advantages and Disadvantages

Advantages

• High-speed operation enables fast data access and transfer.
• Large storage capacity accommodates a significant amount of data.
• Low power consumption prolongs battery life in portable devices.
• Reliable performance ensures data integrity and system stability.

Disadvantages

• Synchronous DRAM chips may be more expensive compared to other types of memory.
• Requires proper timing and synchronization with the system clock for optimal performance.

Working Principles

The IS65WV25616BLL-70TLA3-TR operates based on the principles of synchronous dynamic random-access memory. It uses a clock signal to synchronize data transfers between the memory chip and the system. When a