IS64WV51216EDBLL-10BLA3-TR

Product Overview

Category

IS64WV51216EDBLL-10BLA3-TR belongs to the category of semiconductor memory products.

Use

This product is primarily used for data storage and retrieval in electronic devices such as computers, smartphones, and embedded systems.

Characteristics

• High-speed operation: The IS64WV51216EDBLL-10BLA3-TR offers fast read and write speeds, enabling efficient data processing.
• Large storage capacity: With a capacity of 512 megabits (64 megabytes), this memory chip can store a significant amount of data.
• Low power consumption: The product is designed to consume minimal power, making it suitable for battery-powered devices.
• Compact package: The IS64WV51216EDBLL-10BLA3-TR comes in a small form factor package, allowing for space-efficient integration into electronic devices.
• Reliable performance: This memory chip is known for its durability and stable operation, ensuring data integrity.

Packaging/Quantity

The IS64WV51216EDBLL-10BLA3-TR is typically packaged in tape and reel format. Each reel contains a specific quantity of chips, usually around 1000 units.

Specifications

• Part Number: IS64WV51216EDBLL-10BLA3-TR
• Memory Type: Synchronous DRAM (SDRAM)
• Organization: 512 Megabits x 16 bits
• Operating Voltage: 2.5V - 3.3V
• Speed Grade: 10ns (nanoseconds)
• Package Type: BGA (Ball Grid Array)
• Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The IS64WV51216EDBLL-10BLA3-TR has a total of 66 pins. The pin configuration is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. DQ8
11. DQ9
12. DQ10
13. DQ11
14. DQ12
15. DQ13
16. DQ14
17. DQ15
18. NC (No Connection)
19. A0
20. A1
21. A2
22. A3
23. A4
24. A5
25. A6
26. A7
27. A8
28. A9
29. A10
30. A11
31. A12
32. A13
33. A14
34. A15
35. /CAS (Column Address Strobe)
36. /RAS (Row Address Strobe)
37. /WE (Write Enable)
38. /OE (Output Enable)
39. /UB (Upper Byte)
40. /LB (Lower Byte)
41. /CKE (Clock Enable)
42. /CS (Chip Select)
43. /DQM0 (Data Mask 0)
44. /DQM1 (Data Mask 1)
45. /DQM2 (Data Mask 2)
46. /DQM3 (Data Mask 3)
47. VSS
48. VSS
49. VSS
50. VSS
51. VSS
52. VSS
53. VSS
54. VSS
55. VSS
56. VSS
57. VSS
58. VSS
59. VSS
60. VSS
61. VSS
62. VSS
63. VSS
64. VSS
65. VSS
66. VDDQ

Functional Features

The IS64WV51216EDBLL-10BLA3-TR offers the following functional features:

• Random Access: The memory chip allows for random access to any location within its storage capacity, enabling efficient data retrieval.
• Burst Mode: It supports burst mode operation, allowing for consecutive data transfers without the need for repeated address input.
• Auto Refresh: The product automatically performs periodic refresh operations to maintain data integrity.
• Low Power Standby: In standby mode, the chip consumes minimal power, conserving energy in battery-powered devices.

Advantages and Disadvantages

Advantages

• High-speed operation enables fast data processing.
• Large storage capacity accommodates a significant amount of data.
• Low power consumption prolongs battery life in portable devices.
• Compact package facilitates space-efficient integration.
• Reliable performance ensures data integrity.

Disadvantages

• Limited compatibility with certain older systems that