IS64WV51216BLL-10CTLA3

Basic Information Overview

• Category: Integrated Circuit (IC)
• Use: Memory chip
• Characteristics:
  • High-speed operation
  • Low power consumption
  • Large storage capacity
• Package: Ball Grid Array (BGA)
• Essence: Non-volatile memory storage
• Packaging/Quantity: Individually packaged, quantity varies based on order size

Specifications

• Model: IS64WV51216BLL-10CTLA3
• Organization: 512K words x 16 bits
• Voltage Supply: 2.7V - 3.6V
• Access Time: 10ns
• Operating Temperature Range: -40°C to +85°C
• Data Retention: 20 years
• Interface: Parallel

Detailed Pin Configuration

The IS64WV51216BLL-10CTLA3 has a total of 48 pins. The pin configuration is as follows:

1. VCCQ
2. VSSQ
3. A0
4. A1
5. A2
6. A3
7. A4
8. A5
9. A6
10. A7
11. A8
12. A9
13. A10
14. A11
15. A12
16. A13
17. A14
18. A15
19. DQ0
20. DQ1
21. DQ2
22. DQ3
23. DQ4
24. DQ5
25. DQ6
26. DQ7
27. DQ8
28. DQ9
29. DQ10
30. DQ11
31. DQ12
32. DQ13
33. DQ14
34. DQ15
35. WE#
36. CAS#
37. RAS#
38. CKE
39. CS#
40. OE#
41. NC
42. VCC
43. VSS
44. A16
45. A17
46. A18
47. A19
48. A20

Functional Features

• High-speed operation allows for quick data access and retrieval.
• Low power consumption ensures energy efficiency.
• Large storage capacity provides ample space for data storage needs.
• Non-volatile memory retains data even when power is disconnected.

Advantages and Disadvantages

Advantages: - Fast access time improves overall system performance. - Low power consumption prolongs battery life in portable devices. - Large storage capacity accommodates extensive data requirements. - Non-volatile memory ensures data integrity during power interruptions.

Disadvantages: - Higher cost compared to other memory technologies. - Limited endurance due to finite write cycles. - Relatively larger physical size compared to newer memory technologies.

Working Principles

The IS64WV51216BLL-10CTLA3 is based on the technology of Static Random Access Memory (SRAM). It stores data using a combination of flip-flops, which retain their state as long as power is supplied. The chip utilizes an address bus to select specific memory locations and a data bus to read from or write to those locations. The control signals, such as WE#, CAS#, RAS#, CKE, CS#, and OE#, facilitate the proper functioning of the memory chip.

Detailed Application Field Plans

The IS64WV51216BLL-10CTLA3 is commonly used in various electronic devices that require high-speed and non-volatile memory storage. Some of its application fields include: - Computer systems - Networking equipment - Telecommunications devices - Industrial automation systems - Automotive electronics

Detailed and Complete Alternative Models

1. IS64WV51216BLL-10CTLA2
   • Similar specifications and features as IS64WV51216BLL-10CTLA3, but with a different pin configuration.
2. IS64WV51216BLL-12CTLA3
   • Same pin configuration as IS64WV51216BLL-10CTLA3, but with a slightly slower access time of 12ns.
3. IS64WV51216BLL-15CTLA3
   • Same pin configuration as IS64WV51216BLL-10CTLA3, but with a slower access time of 15ns.

These alternative models provide options with varying performance characteristics to suit different application requirements.

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