IS64WV12816DBLL-12BLA3-TR

Product Overview

Category

IS64WV12816DBLL-12BLA3-TR belongs to the category of high-speed, low-power CMOS static random access memory (SRAM) chips.

Use

This product is primarily used in electronic devices that require fast and reliable data storage and retrieval. It is commonly found in applications such as computer systems, networking equipment, telecommunications devices, and consumer electronics.

Characteristics

• High-speed operation: The IS64WV12816DBLL-12BLA3-TR offers fast access times, allowing for quick data retrieval.
• Low power consumption: This SRAM chip is designed to minimize power usage, making it suitable for battery-powered devices.
• Large storage capacity: With a capacity of 128 megabits (16 megabytes), this chip can store a significant amount of data.
• Wide temperature range: The IS64WV12816DBLL-12BLA3-TR is capable of operating reliably across a wide temperature range, making it suitable for various environments.
• RoHS compliant: This product meets the Restriction of Hazardous Substances directive, ensuring its environmental friendliness.

Package

The IS64WV12816DBLL-12BLA3-TR is available in a small form factor package, which facilitates easy integration into electronic devices. It is commonly packaged in a ball grid array (BGA) package.

Packaging/Quantity

This product is typically supplied in reels or trays, depending on the manufacturer's packaging standards. The quantity per reel or tray may vary, but it is usually in the range of several hundred to several thousand units.

Specifications

• Organization: 16M words × 8 bits
• Supply voltage: 2.7V - 3.6V
• Access time: 12 ns
• Standby current: 10 μA (typical)
• Operating temperature range: -40°C to +85°C
• Package dimensions: 8 mm × 10 mm (BGA)

Detailed Pin Configuration

The IS64WV12816DBLL-12BLA3-TR has a total of 48 pins. The pin configuration is as follows:

1. VDDQ
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSSQ
11. WE#
12. CAS#
13. RAS#
14. A0
15. A1
16. A2
17. A3
18. A4
19. A5
20. A6
21. A7
22. A8
23. A9
24. A10
25. A11
26. A12
27. A13
28. A14
29. A15
30. A16
31. A17
32. A18
33. A19
34. A20
35. A21
36. A22
37. A23
38. A24
39. A25
40. A26
41. A27
42. A28
43. A29
44. A30
45. A31
46. VDD
47. NC
48. VSS

Functional Features

• Random access: The IS64WV12816DBLL-12BLA3-TR allows for random access to any memory location, enabling efficient data retrieval.
• Low power standby mode: When not in use, this chip can enter a low power standby mode to conserve energy.
• Easy integration: The small form factor and standard pin configuration make it easy to integrate this SRAM chip into various electronic designs.
• High reliability: The IS64WV12816DBLL-12BLA3-TR is designed to provide reliable data storage and retrieval, ensuring the integrity of critical information.

Advantages and Disadvantages

Advantages

• Fast access times enable quick data retrieval.
• Low power consumption prolongs battery life in portable devices.
• Large storage capacity accommodates a significant amount of data.
• Wide temperature range allows for operation in various environments.
• RoHS compliance ensures environmental friendliness.

Disadvantages

• Higher cost compared to other types of memory technologies.
• Limited scalability beyond the specified storage capacity.

Working Principles

The IS64WV12816DBLL-12BLA3-TR operates based on the principles of static random access memory. It utilizes flip-flops to store each bit of data, which remains stable as long as power is supplied. The memory cells are organized in a matrix, with each cell accessible through a unique address