IS62WV12816EALL-55TLI-TR

Product Overview

Category

IS62WV12816EALL-55TLI-TR belongs to the category of semiconductor memory devices.

Use

This product is primarily used for data storage and retrieval in electronic devices such as computers, smartphones, and embedded systems.

Characteristics

• High-speed operation
• Low power consumption
• Large storage capacity
• Non-volatile memory
• Reliable performance

Package

IS62WV12816EALL-55TLI-TR is available in a small form factor package, suitable for surface mount technology (SMT) applications.

Essence

The essence of IS62WV12816EALL-55TLI-TR lies in its ability to store and retrieve digital information quickly and reliably.

Packaging/Quantity

IS62WV12816EALL-55TLI-TR is typically packaged in reels or trays, with a quantity of 2500 units per reel/tray.

Specifications

• Memory Type: Static Random Access Memory (SRAM)
• Organization: 128K words x 16 bits
• Operating Voltage: 3.3V
• Access Time: 55ns
• Interface: Parallel
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The pin configuration of IS62WV12816EALL-55TLI-TR is as follows:

1. Vcc
2. WE#
3. OE#
4. A0-A16
5. DQ0-DQ15
6. CE#
7. UB#/LB#
8. BYTE#
9. NC
10. GND

(Note: "#" denotes an active-low signal)

Functional Features

• Byte Write and Read Operations
• Automatic Power-Down Mode
• Easy Interfacing with Microcontrollers and Processors
• Low Standby Current

Advantages

• High-speed operation enables fast data access.
• Low power consumption prolongs battery life in portable devices.
• Large storage capacity accommodates a wide range of applications.
• Non-volatile memory retains data even when power is disconnected.
• Reliable performance ensures data integrity.

Disadvantages

• Relatively higher cost compared to other memory technologies.
• Limited endurance compared to non-volatile memories like Flash.

Working Principles

IS62WV12816EALL-55TLI-TR utilizes static random access memory technology, which stores each bit of data in a flip-flop circuit. This allows for faster access times compared to dynamic random access memory (DRAM). The memory cells are organized in a matrix, with rows and columns forming the addressable locations. Data can be written or read by applying appropriate control signals to the memory interface.

Detailed Application Field Plans

IS62WV12816EALL-55TLI-TR finds applications in various electronic devices, including but not limited to: - Personal computers - Laptops - Servers - Mobile phones - Tablets - Gaming consoles - Automotive electronics - Industrial control systems - Medical equipment

Detailed and Complete Alternative Models

Some alternative models that offer similar functionality to IS62WV12816EALL-55TLI-TR include: - MT45W8MW16BGX-701IT - AS6C4008-55SIN - CY62148EV30LL-45ZSXI - K6R4016V1D-UI10

(Note: The list above is not exhaustive and serves as an example.)

In conclusion, IS62WV12816EALL-55TLI-TR is a high-speed, low-power, and reliable semiconductor memory device primarily used for data storage and retrieval in various electronic devices. Its characteristics, pin configuration, functional features, advantages, disadvantages, working principles, application field plans, and alternative models make it a versatile choice for memory-intensive applications.

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