IS61WV2568EDBLL-10BLI-TR

Product Overview

Category

IS61WV2568EDBLL-10BLI-TR belongs to the category of static random-access memory (SRAM) chips.

Use

This product is commonly used in various electronic devices and systems that require high-speed read and write operations, such as computers, smartphones, networking equipment, and automotive electronics.

Characteristics

• High-speed operation: The IS61WV2568EDBLL-10BLI-TR offers fast access times, allowing for efficient data retrieval and storage.
• Low power consumption: This SRAM chip is designed to minimize power usage, making it suitable for battery-powered devices.
• Wide temperature range: It can operate reliably across a wide temperature range, ensuring its suitability for various environments.
• High density: With a capacity of 2568 kilobits, this chip provides ample storage space for data-intensive applications.
• Small form factor: The package size of IS61WV2568EDBLL-10BLI-TR is compact, enabling its integration into space-constrained designs.

Package and Quantity

The IS61WV2568EDBLL-10BLI-TR is available in a small outline integrated circuit (SOIC) package. It is typically sold in reels containing a specific quantity, such as 2500 units per reel.

Specifications

• Organization: 32K words x 8 bits
• Supply voltage: 2.7V - 3.6V
• Access time: 10 ns
• Standby current: 5 μA (typical)
• Operating temperature range: -40°C to +85°C
• Package type: SOIC-28

Detailed Pin Configuration

The IS61WV2568EDBLL-10BLI-TR has a total of 28 pins, which are assigned specific functions. The pin configuration is as follows:

1. A0 - Address Input
2. A1 - Address Input
3. A2 - Address Input
4. A3 - Address Input
5. A4 - Address Input
6. A5 - Address Input
7. A6 - Address Input
8. A7 - Address Input
9. A8 - Address Input
10. A9 - Address Input
11. A10 - Address Input
12. A11 - Address Input
13. A12 - Address Input
14. A13 - Address Input
15. A14 - Address Input
16. A15 - Address Input
17. CE1 - Chip Enable Input
18. CE2 - Chip Enable Input
19. OE - Output Enable Input
20. WE - Write Enable Input
21. I/O0 - Data Input/Output
22. I/O1 - Data Input/Output
23. I/O2 - Data Input/Output
24. I/O3 - Data Input/Output
25. I/O4 - Data Input/Output
26. I/O5 - Data Input/Output
27. Vcc - Power Supply
28. GND - Ground

Functional Features

• High-speed operation: The IS61WV2568EDBLL-10BLI-TR offers fast access times, allowing for quick data retrieval and storage.
• Easy integration: It can be easily integrated into existing electronic systems due to its standard interface and compatibility with various microcontrollers and processors.
• Low power consumption: This SRAM chip is designed to minimize power usage, making it suitable for energy-efficient devices.
• Reliable performance: With its wide temperature range and stable operation, the IS61WV2568EDBLL-10BLI-TR ensures reliable performance in diverse environments.

Advantages and Disadvantages

Advantages

• High-speed operation enables efficient data processing.
• Low power consumption prolongs battery life in portable devices.
• Wide temperature range ensures reliability in extreme conditions.
• Compact form factor allows for easy integration into space-constrained designs.

Disadvantages

• Limited storage capacity compared to other memory technologies.
• Volatile memory requires constant power supply to retain data.

Working Principles

The IS61WV2568EDBLL-10BLI-TR is based on static random-access memory (SRAM) technology. It stores data using flip-flops, which are stable electronic circuits capable of holding information as long as power is supplied. The chip's internal circuitry allows for fast read and write operations by utilizing address inputs, control signals, and data input/output lines.

Detailed Application Field Plans

The IS61WV2568EDBLL-10BLI-TR finds applications in various fields, including:

1. Computers and laptops: Used as cache memory to enhance system performance.
2. Smartphones and tablets: Provides temporary storage for running applications