IS61WV204816ALL-10BLI-TR

Product Overview

Category: Integrated Circuit (IC)

Use: Memory device

Characteristics: - High-speed performance - Low power consumption - Small form factor - Wide operating temperature range

Package: Ball Grid Array (BGA)

Essence: This IC is a high-performance memory device that offers fast data access and low power consumption. It is commonly used in various electronic devices.

Packaging/Quantity: The IS61WV204816ALL-10BLI-TR is typically packaged in reels and comes in quantities of 2500 units per reel.

Specifications

• Part Number: IS61WV204816ALL-10BLI-TR
• Memory Type: SRAM (Static Random Access Memory)
• Memory Size: 4 Megabits (4M x 16 bits)
• Operating Voltage: 3.3V
• Access Time: 10 ns
• Organization: 4M words x 16 bits
• Package Type: 48-ball BGA
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The IS61WV204816ALL-10BLI-TR has a total of 48 pins. Here is the detailed pin configuration:

1. VCC
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. /CE
19. /OE
20. WE
21. I/O0
22. I/O1
23. I/O2
24. I/O3
25. I/O4
26. I/O5
27. I/O6
28. I/O7
29. I/O8
30. I/O9
31. I/O10
32. I/O11
33. I/O12
34. I/O13
35. I/O14
36. I/O15
37. VSS
38. NC
39. NC
40. NC
41. NC
42. NC
43. NC
44. NC
45. NC
46. NC
47. NC
48. NC

Functional Features

• High-speed access: The IS61WV204816ALL-10BLI-TR offers fast data access with an access time of 10 ns, making it suitable for applications that require quick memory operations.
• Low power consumption: This IC is designed to minimize power consumption, making it ideal for battery-powered devices or energy-efficient systems.
• Small form factor: The BGA package allows for a compact design, saving valuable space on the PCB.
• Wide operating temperature range: The IS61WV204816ALL-10BLI-TR can operate reliably in a wide temperature range, from -40°C to +85°C, making it suitable for various environments.

Advantages and Disadvantages

Advantages: - High-speed performance - Low power consumption - Compact size - Wide operating temperature range

Disadvantages: - Limited memory capacity (4 Megabits)

Working Principles

The IS61WV204816ALL-10BLI-TR is based on Static Random Access Memory (SRAM) technology. It stores data using flip-flops, which retain their state as long as power is supplied. The memory cells are organized in a 4M x 16 configuration, allowing for efficient data storage and retrieval.

When a read operation is performed, the address lines (A0-A15) specify the location of the desired data. The /CE (Chip Enable) signal activates the memory chip, while the /OE (Output Enable) signal enables the output buffers. The WE (Write Enable) signal controls write operations.

During a write operation, the data to be written is provided on the I/O lines (I/O0-I/O15), and the corresponding address is specified. The data is then stored in the selected memory cell.

Detailed Application Field Plans

The IS61WV204816ALL-10BLI-TR is widely used in various electronic devices that require fast and reliable memory access. Some common application fields include:

1. Embedded Systems: The IC can be used in embedded systems such as microcontrollers, where quick access to program code or data is crucial.
2. Networking Equipment: It can be employed in networking devices like routers and switches to store routing tables and buffer data packets.
3. Communication Systems: The IC finds applications in communication systems, including base stations and wireless transce