IS61WV102416EDBLL-10T2LI-TR

Product Overview

Category

IS61WV102416EDBLL-10T2LI-TR belongs to the category of semiconductor memory products.

Use

This product is primarily used for data storage and retrieval in electronic devices such as computers, smartphones, and embedded systems.

Characteristics

• High-speed operation
• Low power consumption
• Large storage capacity
• Compact package size
• Reliable performance

Package

IS61WV102416EDBLL-10T2LI-TR is available in a small outline, thin profile (TSOP) package. This package ensures easy integration into various electronic devices.

Essence

The essence of IS61WV102416EDBLL-10T2LI-TR lies in its ability to provide fast and efficient data storage and retrieval capabilities, enhancing the overall performance of electronic devices.

Packaging/Quantity

IS61WV102416EDBLL-10T2LI-TR is typically packaged in reels or trays, depending on the manufacturer's specifications. The quantity per package may vary, but it is commonly available in quantities of 100 or more.

Specifications

• Part Number: IS61WV102416EDBLL-10T2LI-TR
• Memory Type: Static Random Access Memory (SRAM)
• Organization: 1M words × 16 bits
• Operating Voltage: 3.3V
• Access Time: 10 ns
• Interface: Parallel
• Operating Temperature Range: -40°C to +85°C
• RoHS Compliance: Yes

Detailed Pin Configuration

The pin configuration of IS61WV102416EDBLL-10T2LI-TR is as follows:

1. Vcc
2. WE#
3. A0-A18
4. DQ0-DQ15
5. OE#
6. CE#

Note: The pin configuration may vary depending on the manufacturer's specifications. Please refer to the datasheet for the exact pinout.

Functional Features

• High-speed data access
• Low power consumption in standby mode
• Easy integration with various electronic devices
• Reliable performance in extreme temperature conditions
• Compatibility with standard memory interfaces

Advantages and Disadvantages

Advantages

• Fast data access time enhances overall system performance.
• Low power consumption prolongs battery life in portable devices.
• Large storage capacity allows for storing a vast amount of data.
• Compact package size enables space-saving designs.
• Reliable performance ensures data integrity and system stability.

Disadvantages

• Higher cost compared to other types of memory technologies.
• Limited scalability in terms of storage capacity compared to other memory options.
• Volatile memory requires constant power supply to retain data.

Working Principles

IS61WV102416EDBLL-10T2LI-TR is based on static random access memory (SRAM) technology. It stores data using flip-flops, which retain information as long as power is supplied. The memory cells are organized in a matrix, allowing simultaneous access to multiple data locations. When a read or write operation is performed, the appropriate address is provided, and the data is accessed from or written to the corresponding memory cell.

Detailed Application Field Plans

IS61WV102416EDBLL-10T2LI-TR finds applications in various electronic devices, including but not limited to: - Computers and servers - Smartphones and tablets - Networking equipment - Automotive electronics - Industrial control systems - Medical devices

Detailed and Complete Alternative Models

Some alternative models that offer similar functionality to IS61WV102416EDBLL-10T2LI-TR include: - MT48LC16M16A2P-75 - AS6C1008-55SIN - CY62157EV30LL-45ZSXI

These models have comparable specifications and can be considered as alternatives based on specific requirements and availability.

In conclusion, IS61WV102416EDBLL-10T2LI-TR is a high-performance SRAM memory product that offers fast data access, low power consumption, and reliable performance. It finds applications in various electronic devices and is available in a compact package. While it has advantages such as enhanced system performance and large storage capacity, it also has limitations in terms of cost and scalability. Overall, IS61WV102416EDBLL-10T2LI-TR provides an efficient solution for data storage needs in modern electronic devices.