IS61VPS51236B-200B3LI

Product Overview

Category

IS61VPS51236B-200B3LI belongs to the category of semiconductor memory products.

Use

It is primarily used for data storage and retrieval in electronic devices such as computers, smartphones, and other digital systems.

Characteristics

• High-speed performance
• Non-volatile memory
• Low power consumption
• Compact size

Package

IS61VPS51236B-200B3LI is available in a small form factor package, which makes it suitable for integration into various electronic devices.

Essence

The essence of IS61VPS51236B-200B3LI lies in its ability to store and retrieve data quickly and efficiently, enhancing the overall performance of electronic devices.

Packaging/Quantity

IS61VPS51236B-200B3LI is typically packaged in trays or reels, with each package containing a specific quantity of memory chips.

Specifications

• Model: IS61VPS51236B-200B3LI
• Memory Type: Static Random Access Memory (SRAM)
• Capacity: 512 megabits (64 megabytes)
• Speed: 200 MHz
• Voltage: 3.3V
• Interface: Parallel
• Operating Temperature: -40°C to +85°C

Detailed Pin Configuration

The pin configuration of IS61VPS51236B-200B3LI is as follows:

1. Vcc
2. A0-A18
3. DQ0-DQ31
4. WE#
5. OE#
6. CE#
7. UB#
8. LB#
9. CLK
10. NC
11. GND

(Note: The above list represents only a subset of the total pins. Please refer to the datasheet for the complete pin configuration.)

Functional Features

• High-speed data access
• Random access capability
• Low power consumption in standby mode
• Easy integration into existing electronic systems
• Reliable data retention

Advantages and Disadvantages

Advantages

• Fast data access speed enhances overall system performance.
• Non-volatile memory ensures data integrity even during power loss.
• Low power consumption prolongs battery life in portable devices.
• Compact size allows for space-efficient integration.

Disadvantages

• Relatively higher cost compared to other memory technologies.
• Limited capacity compared to some other memory types.
• Susceptible to electromagnetic interference (EMI) due to its parallel interface.

Working Principles

IS61VPS51236B-200B3LI operates based on the principles of static random access memory. It stores data in a volatile manner, meaning that the stored information is lost when power is removed. The memory cells within the chip are organized in a matrix-like structure, allowing for fast and random access to individual data locations.

Detailed Application Field Plans

IS61VPS51236B-200B3LI finds applications in various fields, including:

1. Computer systems
2. Networking equipment
3. Telecommunications devices
4. Automotive electronics
5. Industrial control systems

Detailed and Complete Alternative Models

Some alternative models to IS61VPS51236B-200B3LI include:

1. IS61VPS25636B-200B3LI: 256 megabit capacity variant
2. IS61VPS102436B-200B3LI: 1 gigabit capacity variant
3. IS61VPS51218B-200B3LI: Lower voltage variant (2.5V)

(Note: The above list represents only a subset of the available alternative models. Please refer to the manufacturer's catalog for a complete list.)

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