IS61VPS204836B-250B3LI

Product Overview

Category

IS61VPS204836B-250B3LI belongs to the category of semiconductor memory products.

Use

It is primarily used for data storage and retrieval in electronic devices such as computers, smartphones, and embedded systems.

Characteristics

• High-speed operation
• Low power consumption
• Large storage capacity
• Compact size
• Reliable performance

Package

IS61VPS204836B-250B3LI is available in a compact package that ensures easy integration into various electronic devices.

Essence

The essence of IS61VPS204836B-250B3LI lies in its ability to provide efficient and reliable data storage and retrieval capabilities.

Packaging/Quantity

IS61VPS204836B-250B3LI is typically packaged in trays or reels, with each package containing a specific quantity of memory chips.

Specifications

• Memory Type: Static Random Access Memory (SRAM)
• Capacity: 2048 kilobits (256 kilobytes)
• Organization: 32K words x 8 bits
• Supply Voltage: 2.5V
• Operating Temperature Range: -40°C to +85°C
• Access Time: 10 ns
• Standby Current: 1 µA (typical)
• Package Type: BGA (Ball Grid Array)

Detailed Pin Configuration

The pin configuration of IS61VPS204836B-250B3LI is as follows:

1. VCC
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. A16
19. A17
20. A18
21. A19
22. A20
23. A21
24. A22
25. A23
26. A24
27. A25
28. A26
29. A27
30. A28
31. A29
32. A30
33. A31
34. DQ0
35. DQ1
36. DQ2
37. DQ3
38. DQ4
39. DQ5
40. DQ6
41. DQ7
42. WE#
43. OE#
44. CE#

Functional Features

• Random access to stored data
• High-speed read and write operations
• Low power consumption in standby mode
• Easy integration into various electronic devices
• Reliable performance under different operating conditions

Advantages and Disadvantages

Advantages

• High-speed operation allows for quick data access.
• Low power consumption helps conserve energy.
• Large storage capacity accommodates a significant amount of data.
• Compact size enables easy integration into space-constrained devices.
• Reliable performance ensures data integrity.

Disadvantages

• Limited storage capacity compared to other memory technologies like NAND flash.
• Higher cost per unit compared to some alternative memory solutions.

Working Principles

IS61VPS204836B-250B3LI utilizes static random access memory (SRAM) technology. It stores data using flip-flops, which retain their state as long as power is supplied. The stored data can be accessed randomly, allowing for fast read and write operations.

Detailed Application Field Plans

IS61VPS204836B-250B3LI finds applications in various electronic devices, including but not limited to: - Computers and laptops - Smartphones and tablets - Networking equipment - Automotive electronics - Industrial control systems - Medical devices

Detailed and Complete Alternative Models

Some alternative models to IS61VPS204836B-250B3LI that offer similar functionality and specifications include: - IS61VPS204816B-250B3LI - IS61VPS204832B-250B3LI - IS61VPS204864B-250B3LI - IS61VPS2048128B-250B3LI

These alternative models provide options with varying storage capacities to suit different application requirements.

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