IS61NVF51236-7.5B3I

Basic Information Overview

• Category: Integrated Circuit (IC)
• Use: Memory device
• Characteristics:
  • Non-volatile
  • High density
  • Low power consumption
• Package: BGA (Ball Grid Array)
• Essence: Non-volatile memory storage
• Packaging/Quantity: Individual units packaged in trays or reels

Specifications

• Model: IS61NVF51236-7.5B3I
• Memory Type: Flash
• Density: 512Mb (Mega-bits)
• Organization: 32M x 16
• Voltage Supply: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Speed: 7.5ns (nanoseconds)
• Interface: Parallel

Detailed Pin Configuration

The IS61NVF51236-7.5B3I has a total of 48 pins, which are arranged as follows:

```

Pin Name Description

1 A0-A19 Address Inputs 2 DQ0-DQ15 Data Input/Output 3 WE# Write Enable 4 CE# Chip Enable 5 OE# Output Enable 6 VCC Power Supply 7 GND Ground 8 NC No Connection 9 WP# Write Protect 10 RP# Reset/Power Down 11 RY/BY# Ready/Busy 12 A20-A22 Address Inputs 13 A-RE# Address Latch Enable 14 BYTE# Byte/Word Organization 15 UB/LB# Upper/Lower Byte Control 16 NC No Connection 17 ALE Address Latch Enable 18 CLE Command Latch Enable 19 CE2# Chip Enable 2 20 VCCQ Power Supply for I/O 21 DQS Data Strobe 22 DM Data Mask 23 NC No Connection 24 NC No Connection 25 NC No Connection 26 NC No Connection 27 NC No Connection 28 NC No Connection 29 NC No Connection 30 NC No Connection 31 NC No Connection 32 NC No Connection 33 NC No Connection 34 NC No Connection 35 NC No Connection 36 NC No Connection 37 NC No Connection 38 NC No Connection 39 NC No Connection 40 NC No Connection 41 NC No Connection 42 NC No Connection 43 NC No Connection 44 NC No Connection 45 NC No Connection 46 NC No Connection 47 NC No Connection 48 NC No Connection ```

Functional Features

• Non-volatile memory allows data retention even when power is disconnected.
• High-density storage capacity enables the storage of large amounts of data.
• Low power consumption ensures efficient operation and extended battery life.

Advantages and Disadvantages

Advantages: - Non-volatile nature ensures data integrity during power cycles. - High density allows for compact designs and increased storage capacity. - Low power consumption reduces energy usage and extends battery life.

Disadvantages: - Relatively slower access speed compared to volatile memory types. - Limited endurance due to the finite number of write/erase cycles.

Working Principles

The IS61NVF51236-7.5B3I is based on flash memory technology. It utilizes floating-gate transistors to store data in a non-volatile manner. When data is written, electrons are trapped in the floating gate, altering the transistor's threshold voltage. This change in voltage allows the stored data to be retained even when power is disconnected. The memory can be read by applying appropriate voltages to the address inputs and activating the output enable signal.

Detailed Application Field Plans

The IS61NVF51236-7.5B3I is commonly used in various electronic devices that require non-volatile memory storage. Some of its application fields include: - Consumer electronics (e.g., smartphones, tablets, digital cameras) - Automotive systems (e.g., infotainment systems, navigation units) - Industrial equipment (e.g., control systems, data loggers) - Medical devices (e.g., patient monitors, diagnostic equipment)

Detailed and Complete Alternative Models

• IS61NVF25636-7.5B3I: 256Mb density, same specifications as IS61NVF51236-7.5B3