IS61NVF25672-7.5B1I-TR
Product Overview
Category
IS61NVF25672-7.5B1I-TR belongs to the category of Non-Volatile Memory (NVM) products.
Use
This product is primarily used for storing and retrieving data in electronic devices.
Characteristics
- Non-volatile: The stored data is retained even when power is removed.
- High capacity: The IS61NVF25672-7.5B1I-TR has a storage capacity of 256 megabits.
- Fast access time: It offers quick read and write operations.
- Low power consumption: This product is designed to be energy-efficient.
- Reliable: It provides robust data retention and endurance.
Package
The IS61NVF25672-7.5B1I-TR is available in a compact package, suitable for integration into various electronic devices.
Essence
The essence of this product lies in its ability to provide non-volatile memory storage with high capacity and fast access times.
Packaging/Quantity
The IS61NVF25672-7.5B1I-TR is typically packaged in trays or reels, depending on the quantity ordered.
Specifications
- Part Number: IS61NVF25672-7.5B1I-TR
- Memory Type: Non-Volatile Flash
- Capacity: 256 Megabits
- Access Time: 70 ns
- Supply Voltage: 2.7V - 3.6V
- Operating Temperature Range: -40°C to +85°C
- Package Type: TSOP-II
Detailed Pin Configuration
The IS61NVF25672-7.5B1I-TR has a total of 48 pins. The pin configuration is as follows:
- VCC
- A0
- A1
- A2
- A3
- A4
- A5
- A6
- A7
- A8
- A9
- A10
- A11
- A12
- A13
- A14
- A15
- A16
- A17
- A18
- A19
- A20
- A21
- A22
- A23
- A24
- A25
- A26
- A27
- A28
- A29
- A30
- A31
- CE#
- WE#
- OE#
- BYTE#
- UB#
- LB#
- DQ0
- DQ1
- DQ2
- DQ3
- DQ4
- DQ5
- DQ6
- DQ7
- GND
Functional Features
- Random Access: The IS61NVF25672-7.5B1I-TR allows for random access to any memory location.
- High-Speed Read/Write: It offers fast read and write operations, enabling efficient data transfer.
- Sector Erase: This product supports sector erase functionality, allowing selective erasure of specific memory sectors.
- Write Protection: The IS61NVF25672-7.5B1I-TR includes write protection features to prevent accidental modification of stored data.
- Data Retention: The non-volatile nature of this memory ensures long-term data retention without the need for power.
Advantages and Disadvantages
Advantages
- High storage capacity
- Fast access times
- Low power consumption
- Reliable data retention
- Sector erase functionality
Disadvantages
- Limited write endurance
- Higher cost compared to volatile memory options
Working Principles
The IS61NVF25672-7.5B1I-TR utilizes flash memory technology for data storage. It employs a combination of floating-gate transistors and charge trapping mechanisms to store and retrieve data. When data is written, charges are trapped in the floating gate, altering the transistor's conductive properties. These charges can be read back later to retrieve the stored information.
Detailed Application Field Plans
The IS61NVF25672-7.5B1I-TR finds applications in various electronic devices, including but not limited to: - Solid-state drives (SSDs) - Digital cameras - Set-top boxes - Printers - Networking equipment
Its high capacity, fast access times, and non-volatile nature make it suitable for storing firmware, operating systems, and other critical data in these devices.
Detailed and Complete Alternative Models
Some alternative models to the IS61NVF25672-7.
技術ソリューションにおける IS61NVF25672-7.5B1I-TR の適用に関連する 10 件の一般的な質問と回答をリストします。
Sure! Here are 10 common questions and answers related to the application of IS61NVF25672-7.5B1I-TR in technical solutions:
Q1: What is IS61NVF25672-7.5B1I-TR? A1: IS61NVF25672-7.5B1I-TR is a specific model of Non-Volatile Flash memory chip manufactured by Integrated Silicon Solution Inc. It has a capacity of 256 megabits (32 megabytes) and operates at a speed of 7.5 nanoseconds.
Q2: What are the typical applications of IS61NVF25672-7.5B1I-TR? A2: IS61NVF25672-7.5B1I-TR is commonly used in various technical solutions such as embedded systems, industrial automation, automotive electronics, networking equipment, and telecommunications devices.
Q3: What is the voltage requirement for IS61NVF25672-7.5B1I-TR? A3: IS61NVF25672-7.5B1I-TR operates at a voltage range of 2.7V to 3.6V.
Q4: What is the interface used for communication with IS61NVF25672-7.5B1I-TR? A4: IS61NVF25672-7.5B1I-TR uses a standard parallel interface for communication with the host system.
Q5: Can IS61NVF25672-7.5B1I-TR be used as a boot device? A5: Yes, IS61NVF25672-7.5B1I-TR can be used as a boot device in many applications due to its non-volatile nature and fast access times.
Q6: What is the endurance of IS61NVF25672-7.5B1I-TR? A6: IS61NVF25672-7.5B1I-TR has a high endurance, typically rated for 100,000 program/erase cycles.
Q7: Does IS61NVF25672-7.5B1I-TR support hardware data protection features? A7: Yes, IS61NVF25672-7.5B1I-TR supports various hardware data protection features like write protection and block locking to prevent accidental modification or unauthorized access to data.
Q8: Can IS61NVF25672-7.5B1I-TR operate in extreme temperature conditions? A8: Yes, IS61NVF25672-7.5B1I-TR is designed to operate reliably in a wide temperature range, typically from -40°C to +85°C.
Q9: Is IS61NVF25672-7.5B1I-TR compatible with other memory devices? A9: Yes, IS61NVF25672-7.5B1I-TR is compatible with other memory devices and can be used alongside other types of memory like SRAM or DRAM.
Q10: Are there any specific programming requirements for IS61NVF25672-7.5B1I-TR? A10: Yes, IS61NVF25672-7.5B1I-TR requires specific programming algorithms and voltage levels for proper operation. The datasheet provided by the manufacturer should be consulted for detailed programming guidelines.
Please note that these answers are general and may vary depending on the specific requirements and use cases of your technical solution. It's always recommended to refer to the official documentation and datasheets provided by the manufacturer for accurate information.