IS61NVF25672-6.5B1I-TR

Product Overview

Category

IS61NVF25672-6.5B1I-TR belongs to the category of Non-Volatile Memory (NVM) products.

Use

This product is primarily used for storing and retrieving data in electronic devices.

Characteristics

• Non-volatile: The stored data is retained even when power is removed.
• High capacity: The IS61NVF25672-6.5B1I-TR has a storage capacity of 256 megabits.
• Fast access time: It offers quick read and write operations.
• Low power consumption: This product is designed to minimize power usage.
• Reliable: It provides robust data retention and endurance.

Package

The IS61NVF25672-6.5B1I-TR is available in a compact package, suitable for integration into various electronic devices.

Essence

The essence of this product lies in its ability to provide non-volatile memory storage with high capacity and fast access times.

Packaging/Quantity

The IS61NVF25672-6.5B1I-TR is typically packaged in trays or reels, depending on the quantity ordered.

Specifications

• Memory Type: Non-Volatile Flash
• Capacity: 256 Megabits
• Organization: 32M x 72
• Supply Voltage: 3.3V
• Access Time: 65 ns
• Operating Temperature Range: -40°C to +85°C
• Interface: Parallel

Detailed Pin Configuration

The IS61NVF25672-6.5B1I-TR features a parallel interface with the following pin configuration:

1. VCC
2. A0-A24
3. DQ0-DQ71
4. WE#
5. CE#
6. OE#
7. BYTE#
8. RY/BY#
9. VSS

Functional Features

• Random access: Allows for reading and writing data at any memory location.
• Block erase: Supports erasing large blocks of data for efficient memory management.
• Write protection: Provides mechanisms to protect specific memory regions from being overwritten.
• Data integrity: Implements error correction codes (ECC) to ensure reliable data storage.

Advantages and Disadvantages

Advantages

• Non-volatile memory ensures data retention even during power loss.
• High capacity allows for storing large amounts of data.
• Fast access time enables quick read and write operations.
• Low power consumption prolongs battery life in portable devices.
• Reliable data retention and endurance ensure long-term usability.

Disadvantages

• Limited write endurance compared to other types of memory.
• Higher cost per bit compared to volatile memory technologies.
• Slower access times compared to volatile memory.

Working Principles

The IS61NVF25672-6.5B1I-TR utilizes flash memory technology to store data. It consists of a grid of memory cells, where each cell can store multiple bits of information. The data is stored by trapping electric charges within the memory cells, which can be accessed and modified as needed. The non-volatile nature of flash memory ensures that the stored data remains intact even when power is removed.

Detailed Application Field Plans

The IS61NVF25672-6.5B1I-TR finds applications in various electronic devices, including but not limited to: - Solid-state drives (SSDs) - Digital cameras - Mobile phones - Tablets - Automotive electronics - Industrial control systems

Detailed and Complete Alternative Models

1. IS61NVF51236-10B3I-TR
2. IS61NVF12836-12B3I-TR
3. IS61NVF25636-15B3I-TR
4. IS61NVF51236-20B3I-TR

These alternative models offer different capacities, access times, and voltage requirements to cater to specific application needs.

In conclusion, the IS61NVF25672-6.5B1I-TR is a non-volatile memory product with high capacity, fast access times, and low power consumption. It finds applications in various electronic devices and offers advantages such as data retention, reliability, and endurance. However, it also has limitations in terms of write endurance and cost per bit. The detailed pin configuration, functional features, working principles, and alternative models provide a comprehensive understanding of this product's capabilities and usage.