IS61LPS25636B-200TQLI

Product Overview

Category

IS61LPS25636B-200TQLI belongs to the category of semiconductor memory products.

Use

This product is primarily used for data storage and retrieval in electronic devices such as computers, smartphones, and tablets.

Characteristics

• High-speed performance
• Low power consumption
• Large storage capacity
• Compact size

Package

IS61LPS25636B-200TQLI is available in a small form factor package, which makes it suitable for integration into various electronic devices.

Essence

The essence of IS61LPS25636B-200TQLI lies in its ability to provide reliable and efficient data storage capabilities for electronic devices.

Packaging/Quantity

IS61LPS25636B-200TQLI is typically packaged in trays or reels, with each package containing a specific quantity of chips. The exact quantity may vary depending on the manufacturer's specifications.

Specifications

• Model: IS61LPS25636B-200TQLI
• Memory Type: Static Random Access Memory (SRAM)
• Capacity: 256 megabits (32 megabytes)
• Operating Voltage: 3.3V
• Speed: 200 MHz
• Interface: Parallel
• Pin Count: 100 pins
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The pin configuration of IS61LPS25636B-200TQLI is as follows:

1. VDD
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. A16
19. A17
20. A18
21. A19
22. A20
23. A21
24. A22
25. A23
26. A24
27. A25
28. A26
29. A27
30. A28
31. A29
32. A30
33. A31
34. DQ0
35. DQ1
36. DQ2
37. DQ3
38. DQ4
39. DQ5
40. DQ6
41. DQ7
42. DQ8
43. DQ9
44. DQ10
45. DQ11
46. DQ12
47. DQ13
48. DQ14
49. DQ15
50. DQ16
51. DQ17
52. DQ18
53. DQ19
54. DQ20
55. DQ21
56. DQ22
57. DQ23
58. DQ24
59. DQ25
60. DQ26
61. DQ27
62. DQ28
63. DQ29
64. DQ30
65. DQ31
66. WE#
67. OE#
68. CE#
69. UB#
70. LB#
71. VSS
72. VSS
73. VSS
74. VSS
75. VSS
76. VSS
77. VSS
78. VSS
79. VSS
80. VSS
81. VSS
82. VSS
83. VSS
84. VSS
85. VSS
86. VSS
87. VSS
88. VSS
89. VSS
90. VSS
91. VSS
92. VSS
93. VSS
94. VSS
95. VSS
96. VSS
97. VSS
98. VSS
99. VSS
100. VDD

Functional Features

• High-speed data access
• Non-volatile storage
• Low power consumption
• Easy integration into electronic devices
• Reliable data retention

Advantages and Disadvantages

Advantages

• Fast data access speed
• Low power consumption
• Compact size
• Large storage capacity

Disadvantages

• Relatively higher cost compared to other memory technologies
• Limited scalability in terms of capacity expansion

Working Principles

IS61LPS25636B-200TQLI operates based on the principles of static random access memory (SRAM). It stores data using a network of flip-flops, which retain their state as long as power is supplied. This allows for fast read and write operations.

Detailed Application Field Plans