IS42S32800J-6BLI-TR

Product Overview

Category

IS42S32800J-6BLI-TR belongs to the category of dynamic random-access memory (DRAM) modules.

Use

It is primarily used as a high-speed volatile storage device in electronic systems, such as computers, servers, and embedded systems.

Characteristics

• High-speed operation
• Large storage capacity
• Volatile memory
• Low power consumption
• Compact package size

Package

IS42S32800J-6BLI-TR is available in a small outline, dual in-line memory module (SODIMM) package.

Essence

The essence of IS42S32800J-6BLI-TR lies in its ability to provide fast and reliable data storage and retrieval in various electronic systems.

Packaging/Quantity

IS42S32800J-6BLI-TR is typically packaged in trays or reels, with each unit containing a single DRAM module.

Specifications

• Memory Type: Synchronous DRAM (SDRAM)
• Organization: 32M words x 8 bits
• Operating Voltage: 3.3V
• Speed Grade: 6
• Interface: Parallel
• Clock Frequency: Up to 166 MHz
• Refresh Mode: Auto-refresh and self-refresh
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

IS42S32800J-6BLI-TR follows a standard pin configuration for SODIMM modules. The pins are numbered and arranged as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSS
11. DQ8
12. DQ9
13. DQ10
14. DQ11
15. DQ12
16. DQ13
17. DQ14
18. DQ15
19. VDD
20. A0
21. A1
22. A2
23. A3
24. A4
25. A5
26. A6
27. A7
28. A8
29. A9
30. A10
31. A11
32. A12
33. A13
34. A14
35. A15
36. BA0
37. BA1
38. RAS#
39. CAS#
40. WE#
41. CS#
42. VSS
43. CLK
44. CKE
45. VDD
46. NC
47. DM0
48. DM1
49. VSS
50. VDD

Functional Features

• High-speed data transfer
• Burst mode operation
• On-die termination (ODT) for improved signal integrity
• Programmable burst length and latency
• Auto precharge and power-down modes for power savings
• Error correction code (ECC) support (optional)

Advantages

• Fast data access and transfer speeds
• Large storage capacity for demanding applications
• Low power consumption for energy-efficient systems
• Compact form factor suitable for space-constrained designs
• Reliable performance and high data integrity

Disadvantages

• Volatile memory requires constant power supply to retain data
• Relatively higher cost compared to other types of memory
• Limited endurance and lifespan compared to non-volatile memory

Working Principles

IS42S32800J-6BLI-TR operates based on the principles of synchronous dynamic random-access memory. It stores data in a matrix of capacitors, with each capacitor representing a single bit of information. The memory cells are organized into rows and columns, allowing for efficient access and retrieval of data.

During operation, the memory controller sends commands and addresses to select specific rows and columns, enabling read or write operations. The data is stored and retrieved by charging or discharging the capacitors within the selected memory cells.

Detailed Application Field Plans

IS42S32800J-6BLI-TR finds applications in various fields, including:

1. Personal computers and laptops
2. Servers and data centers
3. Networking equipment
4. Industrial automation systems
5. Medical devices
6. Automotive electronics
7. Consumer electronics

Detailed and Complete Alternative Models

1. IS42S16160D-7TLI: 16M words x 16 bits SDRAM module
2. IS45S16400F-7TLA1: 64M words x 4 bits SDRAM module
3. IS43DR16640A-25DBL: 256M words x 16 bits DDR3L SDRAM