IS42S32160D-6BI

Product Overview

Category

IS42S32160D-6BI belongs to the category of dynamic random access memory (DRAM) modules.

Use

This product is primarily used in computer systems and electronic devices for storing and retrieving data quickly.

Characteristics

• High-speed data access
• Large storage capacity
• Low power consumption
• Compact package size
• Reliable performance

Package

IS42S32160D-6BI is available in a small outline dual in-line memory module (SO-DIMM) package.

Essence

The essence of IS42S32160D-6BI lies in its ability to provide fast and efficient data storage and retrieval in various electronic devices.

Packaging/Quantity

IS42S32160D-6BI is typically packaged in trays or reels, with each containing a specific quantity of modules. The exact packaging and quantity may vary depending on the manufacturer's specifications.

Specifications

• Memory Type: Synchronous DRAM (SDRAM)
• Memory Size: 512 Megabytes (MB)
• Organization: 32 Megabytes x 16 bits
• Speed Grade: 6
• Operating Voltage: 3.3 Volts (V)
• Interface: Parallel
• Clock Frequency: 166 Megahertz (MHz)
• Refresh Rate: 8K cycles/32ms

Detailed Pin Configuration

The pin configuration of IS42S32160D-6BI is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. DQ8
11. DQ9
12. DQ10
13. DQ11
14. DQ12
15. DQ13
16. DQ14
17. DQ15
18. A0
19. A1
20. A2
21. A3
22. A4
23. A5
24. A6
25. A7
26. A8
27. A9
28. A10
29. A11
30. A12
31. A13
32. A14
33. A15
34. /CAS
35. /RAS
36. /WE
37. /CS0
38. /CS1
39. /CS2
40. /CS3
41. /CKE
42. /CLK
43. /DQM0
44. /DQM1
45. VSS

Functional Features

• Burst mode operation for high-speed data transfer
• Auto-refresh and self-refresh modes for power-saving
• On-die termination (ODT) for improved signal integrity
• Programmable burst length and latency settings
• Support for multiple banks and chip selects

Advantages and Disadvantages

Advantages

• High-speed data access enables faster system performance
• Large storage capacity allows for storing a significant amount of data
• Low power consumption helps in reducing energy usage
• Compact package size facilitates integration into various devices
• Reliable performance ensures data integrity and system stability

Disadvantages

• Relatively higher cost compared to other memory technologies
• Limited scalability beyond certain storage capacities
• Susceptible to data loss in case of power failure without proper backup measures

Working Principles

IS42S32160D-6BI operates based on the principles of synchronous dynamic random access memory (SDRAM). It utilizes a clock signal to synchronize data transfers between the memory module and the host device. The memory cells store data in the form of electrical charges, which need to be periodically refreshed to maintain their integrity.

Detailed Application Field Plans

IS42S32160D-6BI finds applications in various fields, including: 1. Personal computers and laptops 2. Servers and data centers 3. Networking equipment 4. Consumer electronics (e.g., smartphones, tablets) 5. Automotive systems 6. Industrial automation 7. Medical devices

Detailed and Complete Alternative Models

Some alternative models to IS42S32160D-6BI include: 1. MT48LC32M16A2P-75: Micron Technology Inc. 2. K4H511638D-UCB3: Samsung Electronics Co., Ltd. 3. HYB39S512800T-8: Infineon Technologies AG 4. M12L64164A-7T: Alliance Memory Inc. 5. AS4C32M16SB-7TCN: Alliance Semiconductor Corporation

These alternative models offer similar specifications and functionality, providing options for different design requirements.

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