IS42S16800E-75ETL

Product Overview

Category

IS42S16800E-75ETL belongs to the category of dynamic random access memory (DRAM) modules.

Use

It is primarily used as a memory component in various electronic devices such as computers, laptops, servers, and mobile devices.

Characteristics

• High-speed data storage and retrieval capabilities
• Volatile memory that requires constant power supply
• Offers large storage capacity
• Compact size for easy integration into electronic devices

Package

IS42S16800E-75ETL comes in a small form factor package, making it suitable for space-constrained applications.

Essence

The essence of IS42S16800E-75ETL lies in its ability to store and retrieve data quickly, providing efficient memory management for electronic devices.

Packaging/Quantity

Typically, IS42S16800E-75ETL is packaged individually or in bulk quantities, depending on the manufacturer's specifications.

Specifications

• Memory Type: Dynamic Random Access Memory (DRAM)
• Organization: 16M words x 8 bits
• Operating Voltage: 3.3V
• Speed Grade: 75ns
• Interface: Parallel
• Package Type: TSOP II
• Pin Count: 54 pins

Detailed Pin Configuration

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. WE#
11. CAS#
12. RAS#
13. A0
14. A1
15. A2
16. A3
17. A4
18. A5
19. A6
20. A7
21. A8
22. A9
23. A10
24. A11
25. A12
26. A13
27. A14
28. A15
29. BA0#
30. BA1#
31. CLK
32. CKE
33. CS#
34. DQM0#
35. DQM1#
36. DQS0
37. DQS1
38. DM0
39. DM1
40. VSS
41. VSS
42. VSS
43. VSS
44. VSS
45. VSS
46. VSS
47. VSS
48. VSS
49. VSS
50. VSS
51. VSS
52. VSS
53. VSS
54. VSS

Functional Features

• High-speed data transfer rate for efficient memory operations
• Low power consumption for improved energy efficiency
• Easy integration into various electronic devices
• Reliable performance and durability

Advantages

• Large storage capacity allows for the storage of a vast amount of data
• High-speed data access enables quick retrieval and processing of information
• Compact size facilitates space-saving design in electronic devices
• Low power consumption helps prolong battery life in mobile devices

Disadvantages

• Volatile memory requires constant power supply, leading to data loss in case of power failure
• Relatively higher cost compared to other types of memory modules
• Limited compatibility with certain older systems due to interface and voltage requirements

Working Principles

IS42S16800E-75ETL operates based on the principles of dynamic random access memory. It stores data in capacitors within the memory cells, which need to be periodically refreshed to maintain the stored information. When a read or write operation is initiated, the memory controller sends the appropriate signals to access the desired data.

Detailed Application Field Plans

IS42S16800E-75ETL finds applications in various electronic devices, including but not limited to: - Personal computers - Laptops and notebooks - Servers - Mobile devices (smartphones, tablets) - Networking equipment - Industrial control systems

Detailed and Complete Alternative Models

1. IS42S16160D-7TLI: 16M x 16-bit DRAM module with a speed grade of 7ns.
2. IS42S16400F-6TLI: 16M x 4-bit DRAM module with a speed grade of 6ns.
3. IS42S16320B-7BLI: 16M x 32-bit DRAM module with a speed grade of 7ns.

These alternative models offer similar functionality and can be considered as substitutes for IS42S16800E-75ETL based on specific requirements and compatibility considerations.

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