IS42S16800E-75EBL-TR

Product Overview

Category

IS42S16800E-75EBL-TR belongs to the category of dynamic random-access memory (DRAM) modules.

Use

This product is primarily used in computer systems and electronic devices for storing and retrieving data quickly and efficiently.

Characteristics

• High-speed data access
• Large storage capacity
• Low power consumption
• Compact form factor
• Reliable performance

Package

IS42S16800E-75EBL-TR is packaged in a small, rectangular module with pins for easy integration into circuit boards.

Essence

The essence of IS42S16800E-75EBL-TR lies in its ability to provide fast and reliable data storage and retrieval capabilities, enhancing the overall performance of electronic devices.

Packaging/Quantity

IS42S16800E-75EBL-TR is typically packaged in trays or reels, containing multiple units per package. The exact quantity may vary depending on the supplier.

Specifications

• Memory Type: Synchronous DRAM (SDRAM)
• Capacity: 128 Megabytes (MB)
• Organization: 16M words x 8 bits
• Speed: 75 nanoseconds (ns)
• Voltage: 3.3 volts (V)
• Interface: Parallel
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSS
11. WE#
12. CAS#
13. RAS#
14. A0
15. A1
16. A2
17. A3
18. A4
19. A5
20. A6
21. A7
22. A8
23. A9
24. A10
25. A11
26. A12
27. A13
28. A14
29. A15
30. BA0#
31. BA1#
32. CLK
33. CKE
34. CS#
35. DQM0#
36. DQM1#
37. VSS

Functional Features

• High-speed data transfer rate
• Burst mode operation for efficient data access
• Auto-refresh and self-refresh modes for power-saving
• On-die termination (ODT) for improved signal integrity
• Programmable CAS latency for flexible performance optimization

Advantages

• Fast data access speeds enhance overall system performance.
• Large storage capacity allows for the handling of extensive data requirements.
• Low power consumption contributes to energy efficiency.
• Compact form factor enables easy integration into various electronic devices.
• Reliable performance ensures data integrity and system stability.

Disadvantages

• Relatively higher cost compared to other memory technologies.
• Limited scalability in terms of capacity compared to newer memory technologies.
• Susceptible to data loss in case of power failure without proper backup mechanisms.

Working Principles

IS42S16800E-75EBL-TR operates based on the principles of synchronous dynamic random-access memory (SDRAM). It stores data in a matrix of capacitors, with each capacitor representing a single bit of information. The stored data is accessed by sending specific commands and addresses to the memory module, allowing for fast retrieval and modification of data.

Detailed Application Field Plans

IS42S16800E-75EBL-TR finds applications in various fields, including:

1. Personal Computers (PCs)
2. Laptops and Notebooks
3. Servers and Data Centers
4. Networking Equipment
5. Consumer Electronics (e.g., Smartphones, Tablets)
6. Automotive Electronics
7. Industrial Control Systems
8. Medical Devices

Detailed and Complete Alternative Models

1. IS42S16160D-7TLI: 16 Megabytes (MB) SDRAM module with a speed of 7 nanoseconds (ns).
2. IS42S32200E-75BLI: 32 Megabytes (MB) SDRAM module with a speed of 75 nanoseconds (ns).
3. IS42S16400J-7TLI: 16 Megabytes (MB) SDRAM module with a speed of 7 nanoseconds (ns).
4. IS42S81600F-7TLI: 8 Megabytes (MB) SDRAM module with a speed of 7 nanoseconds (ns).
5. IS42S32800G-7TLI: 32 Megabytes (MB) SDRAM module with a speed of 7 nanoseconds (ns).

(Note: The above list is not exhaustive and serves as an example of alternative models available in the market.)