X1226V8I

Product Overview

Category: Integrated Circuit (IC)

Use: X1226V8I is a non-volatile static RAM (NVSRAM) integrated circuit. It combines the benefits of both SRAM and EEPROM, providing non-volatile storage with high-speed read/write operations.

Characteristics: - Non-volatile memory - High-speed read/write operations - Low power consumption - Wide operating voltage range - Durable and reliable

Package: X1226V8I is available in an 8-pin SOIC (Small Outline Integrated Circuit) package.

Essence: The essence of X1226V8I lies in its ability to retain data even when power is removed, making it ideal for applications that require non-volatile memory.

Packaging/Quantity: X1226V8I is typically sold in reels containing 250 units per reel.

Specifications

• Supply Voltage Range: 2.7V to 5.5V
• Operating Temperature Range: -40°C to +85°C
• Memory Size: 256Kb (32K x 8 bits)
• Data Retention: Over 100 years
• Write Endurance: 1 million cycles
• Standby Current: 1µA (typical)
• Active Current: 3mA (typical)

Detailed Pin Configuration

The X1226V8I IC has the following pin configuration:

1. Chip Enable (CE)
2. Output Enable (OE)
3. Write Enable (WE)
4. Address Inputs (A0-A14)
5. Data Inputs/Outputs (DQ0-DQ7)
6. VCC (Power Supply)
7. Ground (GND)
8. Not Connected (NC)

Functional Features

• Non-volatile storage: X1226V8I retains data even when power is removed, ensuring data integrity.
• High-speed operation: The IC offers fast read and write access times, making it suitable for time-critical applications.
• Low power consumption: X1226V8I consumes minimal power during standby and active modes, conserving energy.
• Wide operating voltage range: The IC can operate within a wide voltage range, providing flexibility in various applications.

Advantages and Disadvantages

Advantages: - Non-volatile memory eliminates the need for external backup batteries or capacitors. - High-speed read/write operations enhance system performance. - Low power consumption prolongs battery life. - Wide operating voltage range allows compatibility with different systems.

Disadvantages: - Limited memory size compared to other non-volatile memory options. - Relatively higher cost per bit compared to traditional SRAM.

Working Principles

X1226V8I utilizes a combination of SRAM and EEPROM technologies. It employs a ferroelectric capacitor to store charge, which represents the binary state of each memory cell. When power is applied, the stored charge is read and written back to the memory cells, allowing non-volatile storage.

Detailed Application Field Plans

X1226V8I finds applications in various fields, including but not limited to: 1. Industrial automation 2. Automotive electronics 3. Medical devices 4. Consumer electronics 5. Smart meters

In industrial automation, X1226V8I can be used for storing critical configuration data, such as calibration values or device settings. In automotive electronics, it can serve as a reliable memory for storing vehicle parameters or event logs. Medical devices can utilize X1226V8I for non-volatile storage of patient data or device configurations. In consumer electronics, it can be employed for data retention in devices like digital cameras or portable media players. Smart meters can benefit from X1226V8I by storing energy consumption data even during power outages.

Detailed and Complete Alternative Models

1. X1226H8I: Similar to X1226V8I, but with a wider operating temperature range (-40°C to +125°C).
2. X1226U8I: Offers the same features as X1226V8I, but in a smaller 8-pin µSOP (Micro Small Outline Package) form factor.
3. X1226W8I: Provides additional write protection features for enhanced data security.

These alternative models offer similar functionality to X1226V8I while catering to specific application requirements or form factor constraints.

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