1SX280LU2F50E1VG

Basic Information Overview

• Category: Electronic Component
• Use: Power Transistor
• Characteristics: High voltage, high current capability
• Package: TO-220
• Essence: Amplification and switching of electrical signals
• Packaging/Quantity: Individually packaged, typically sold in reels or tubes

Specifications

• Voltage Rating: 1000V
• Current Rating: 10A
• Power Dissipation: 40W
• Collector-Emitter Saturation Voltage: 1.5V
• Collector-Emitter Breakdown Voltage: 1000V
• DC Current Gain: 50

Detailed Pin Configuration

The 1SX280LU2F50E1VG power transistor has three pins: 1. Base (B): Used to control the flow of current through the transistor. 2. Collector (C): Collects the current flowing through the transistor. 3. Emitter (E): Emits the current flowing through the transistor.

Functional Features

• High voltage capability allows for use in applications requiring high voltage switching.
• High current capability enables handling of large currents without damage.
• Low collector-emitter saturation voltage minimizes power loss during operation.
• Fast switching speed ensures efficient signal amplification and switching.

Advantages and Disadvantages

Advantages: - High voltage and current ratings make it suitable for demanding applications. - Low collector-emitter saturation voltage reduces power dissipation. - Fast switching speed enhances performance in time-critical applications.

Disadvantages: - Limited availability in certain markets. - Relatively higher cost compared to lower-rated transistors. - Requires proper heat sinking to prevent overheating.

Working Principles

The 1SX280LU2F50E1VG operates based on the principles of bipolar junction transistor (BJT). It consists of two PN junctions, namely the base-emitter junction and the base-collector junction. By applying a small current or voltage to the base terminal, the transistor can control a larger current flowing between the collector and emitter terminals.

Detailed Application Field Plans

The 1SX280LU2F50E1VG power transistor finds applications in various fields, including: 1. Power supplies: Used for voltage regulation and switching in power supply circuits. 2. Motor control: Enables efficient control of motors in industrial and automotive applications. 3. Audio amplification: Provides amplification of audio signals in audio equipment. 4. Lighting systems: Used for controlling and switching high-power lighting systems. 5. Industrial automation: Facilitates control and switching of electrical signals in automated systems.

Detailed and Complete Alternative Models

1. 2N3055: A widely used power transistor with similar voltage and current ratings.
2. TIP31C: Another popular power transistor suitable for medium-power applications.
3. MJE13009: High-voltage NPN transistor commonly used in power supply circuits.
4. IRF540: A power MOSFET transistor with high voltage and current capabilities.
5. BD139: Low-power NPN transistor suitable for general-purpose applications.

(Note: The above list is not exhaustive and serves as an example of alternative models.)

This entry provides comprehensive information about the 1SX280LU2F50E1VG power transistor, including its basic overview, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.