10AS057N1F40E1HG

Basic Information Overview

• Category: Electronic Component
• Use: Power Amplifier
• Characteristics: High Gain, Low Noise, Wide Frequency Range
• Package: SMD (Surface Mount Device)
• Essence: Amplification of electrical signals
• Packaging/Quantity: Tape and Reel, 1000 units per reel

Specifications

• Model Number: 10AS057N1F40E1HG
• Type: NPN Transistor
• Maximum Collector Current: 500mA
• Maximum Collector-Emitter Voltage: 40V
• Maximum Power Dissipation: 625mW
• Transition Frequency: 300MHz
• Operating Temperature Range: -55°C to +150°C

Detailed Pin Configuration

The 10AS057N1F40E1HG transistor has three pins: 1. Base (B): Used to control the flow of current through the transistor. 2. Collector (C): Collects the current from the circuit. 3. Emitter (E): Emits the current to the ground.

Functional Features

• High Gain: The transistor provides high amplification of electrical signals.
• Low Noise: It produces minimal noise during signal amplification.
• Wide Frequency Range: Suitable for a wide range of frequency applications.

Advantages

• Compact Size: The SMD package allows for space-saving on PCBs.
• High Performance: Provides excellent amplification with low distortion.
• Versatile: Can be used in various electronic circuits requiring signal amplification.

Disadvantages

• Limited Power Handling: The maximum power dissipation is 625mW, which may not be sufficient for high-power applications.
• Sensitivity to Heat: The operating temperature range is limited, making it unsuitable for extreme temperature environments.

Working Principles

The 10AS057N1F40E1HG transistor operates based on the principles of bipolar junction transistors (BJTs). It consists of three layers of semiconductor material: the emitter, base, and collector. By applying a small current to the base terminal, the transistor allows a larger current to flow from the collector to the emitter, amplifying the input signal.

Detailed Application Field Plans

The 10AS057N1F40E1HG transistor finds applications in various electronic devices and circuits, including: - Audio Amplifiers - Radio Frequency (RF) Amplifiers - Oscillators - Switching Circuits

Detailed and Complete Alternative Models

• 2N3904: NPN Transistor with similar characteristics and pin configuration.
• BC547: NPN Transistor commonly used for general-purpose amplification.
• MPSA42: High Voltage NPN Transistor suitable for power amplifier applications.

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