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SPD30N03S2L07GBTMA1
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SPD30N03S2L07GBTMA1

Product Overview

Category

The SPD30N03S2L07GBTMA1 belongs to the category of power MOSFETs.

Use

It is commonly used in electronic circuits for switching and amplification applications.

Characteristics

  • High voltage capability
  • Low on-resistance
  • Fast switching speed
  • Low gate charge

Package

The SPD30N03S2L07GBTMA1 is typically available in a TO-252 package.

Essence

This MOSFET is essential for efficient power management in various electronic devices and systems.

Packaging/Quantity

It is usually packaged in reels with a quantity of 2500 pieces per reel.

Specifications

  • Drain-Source Voltage (VDS): 30V
  • Continuous Drain Current (ID): 30A
  • On-Resistance (RDS(ON)): 7mΩ
  • Gate-Source Voltage (VGS): ±20V
  • Total Gate Charge (Qg): 17nC
  • Threshold Voltage (VGS(th)): 2.5V

Detailed Pin Configuration

The pin configuration of the SPD30N03S2L07GBTMA1 is as follows: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

  • High current-carrying capability
  • Low conduction losses
  • Suitable for high-frequency applications
  • Enhanced thermal performance

Advantages and Disadvantages

Advantages

  • Low on-resistance leading to reduced power dissipation
  • Fast switching speed for improved efficiency
  • High current-handling capacity
  • Enhanced thermal characteristics

Disadvantages

  • Sensitivity to static electricity
  • Requires careful handling during assembly

Working Principles

The SPD30N03S2L07GBTMA1 operates based on the principle of field-effect transistors, where the application of a voltage at the gate terminal controls the flow of current between the drain and source terminals.

Detailed Application Field Plans

The SPD30N03S2L07GBTMA1 finds extensive use in the following applications: - Switching power supplies - Motor control circuits - LED lighting systems - Battery management systems - Audio amplifiers

Detailed and Complete Alternative Models

Some alternative models to the SPD30N03S2L07GBTMA1 include: - IRF3205 - FDP8870 - AOD4184

In conclusion, the SPD30N03S2L07GBTMA1 power MOSFET offers high-performance characteristics suitable for a wide range of electronic applications, making it an essential component in modern electronic designs.

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技術ソリューションにおける SPD30N03S2L07GBTMA1 の適用に関連する 10 件の一般的な質問と回答をリストします。

  1. What is the maximum drain-source voltage of SPD30N03S2L07GBTMA1?

    • The maximum drain-source voltage of SPD30N03S2L07GBTMA1 is 30V.

  2. What is the continuous drain current rating of SPD30N03S2L07GBTMA1?

    • The continuous drain current rating of SPD30N03S2L07GBTMA1 is 30A.

  3. What is the on-resistance of SPD30N03S2L07GBTMA1?

    • The on-resistance of SPD30N03S2L07GBTMA1 is typically 7mΩ at Vgs=10V.

  4. What is the gate threshold voltage of SPD30N03S2L07GBTMA1?

    • The gate threshold voltage of SPD30N03S2L07GBTMA1 is typically 2V.

  5. What is the power dissipation of SPD30N03S2L07GBTMA1?

    • The power dissipation of SPD30N03S2L07GBTMA1 is 2.5W.

  6. Is SPD30N03S2L07GBTMA1 suitable for high-frequency switching applications?

    • Yes, SPD30N03S2L07GBTMA1 is suitable for high-frequency switching applications due to its low on-resistance and fast switching characteristics.

  7. Can SPD30N03S2L07GBTMA1 be used in automotive applications?

    • Yes, SPD30N03S2L07GBTMA1 is designed for automotive applications and meets the necessary standards and requirements.

  8. What is the operating temperature range of SPD30N03S2L07GBTMA1?

    • The operating temperature range of SPD30N03S2L07GBTMA1 is -55°C to 175°C.

  9. Does SPD30N03S2L07GBTMA1 have built-in ESD protection?

    • Yes, SPD30N03S2L07GBTMA1 has built-in ESD protection, making it suitable for robust and reliable designs.

  10. Is SPD30N03S2L07GBTMA1 available in surface-mount packages?

    • Yes, SPD30N03S2L07GBTMA1 is available in a surface-mount DPAK package, making it suitable for automated assembly processes.