IRFI1010NPBF
Product Category: Power MOSFET
Basic Information Overview: - Category: Power semiconductor - Use: Switching and amplification in power electronics applications - Characteristics: High voltage, high current capability, low on-resistance - Package: TO-220AB - Essence: Efficient power control and management - Packaging/Quantity: Typically packaged in tubes or reels, quantity varies by manufacturer
Specifications: - Voltage Rating: 100V - Current Rating: 84A - On-Resistance: 12mΩ - Gate Threshold Voltage: 2V - Power Dissipation: 200W
Detailed Pin Configuration: The IRFI1010NPBF features a standard TO-220AB pin configuration with three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)
Functional Features: - High voltage capability allows for use in various power applications - Low on-resistance minimizes power loss and heat generation - Fast switching speed enables efficient power control
Advantages: - High voltage and current ratings suitable for demanding applications - Low on-resistance results in reduced power dissipation and improved efficiency - Fast switching speed enhances overall performance
Disadvantages: - Higher cost compared to lower-rated MOSFETs - Larger package size may limit use in space-constrained designs
Working Principles: The IRFI1010NPBF operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the conductivity of the device. When a sufficient gate-source voltage is applied, the MOSFET allows current to flow between the drain and source terminals.
Detailed Application Field Plans: - Power supplies - Motor control - Inverters - DC-DC converters - Audio amplifiers
Detailed and Complete Alternative Models: 1. IRF540NPBF 2. IRF3205PBF 3. IRFB4110PBF 4. IRFZ44NPBF
This comprehensive entry provides an in-depth understanding of the IRFI1010NPBF, covering its category, basic information overview, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.
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技術ソリューションにおける IRFI1010NPBF の適用に関連する 10 件の一般的な質問と回答をリストします。
What is IRFI1010NPBF?
- IRFI1010NPBF is a power MOSFET transistor designed for various electronic applications, including power supplies, motor control, and other high current switching applications.
What is the maximum drain-source voltage of IRFI1010NPBF?
- The maximum drain-source voltage of IRFI1010NPBF is 55 volts.
What is the continuous drain current rating of IRFI1010NPBF?
- The continuous drain current rating of IRFI1010NPBF is 84 amperes.
What is the on-state resistance (RDS(on)) of IRFI1010NPBF?
- The on-state resistance of IRFI1010NPBF is typically around 0.022 ohms.
Can IRFI1010NPBF be used in high-frequency switching applications?
- Yes, IRFI1010NPBF can be used in high-frequency switching applications due to its fast switching characteristics and low gate charge.
Is IRFI1010NPBF suitable for automotive applications?
- Yes, IRFI1010NPBF is suitable for automotive applications due to its rugged construction and high current handling capability.
What are the typical thermal characteristics of IRFI1010NPBF?
- The typical thermal resistance from junction to case (RθJC) of IRFI1010NPBF is 1.25°C/W, and the maximum junction temperature is 175°C.
Does IRFI1010NPBF require a heat sink for high-power applications?
- Yes, for high-power applications, it is recommended to use a heat sink to ensure proper thermal management.
What is the gate-source voltage (VGS) required to fully enhance IRFI1010NPBF?
- The gate-source voltage required to fully enhance IRFI1010NPBF is typically around 10 volts.
Can IRFI1010NPBF be used in parallel to increase current handling capacity?
- Yes, IRFI1010NPBF can be used in parallel to increase current handling capacity, but proper attention should be given to current sharing and thermal management.
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