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IRFH5207TRPBF
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IRFH5207TRPBF

Product Category: Power MOSFET

Basic Information Overview: - Category: Power semiconductor - Use: Switching and amplifying electrical signals in power electronics applications - Characteristics: High efficiency, low on-resistance, fast switching speed - Package: PQFN 5x6 - Essence: Enhancing power management and control in various electronic devices - Packaging/Quantity: Tape & Reel, 3000 units per reel

Specifications: - Drain-Source Voltage (Vdss): 30V - Continuous Drain Current (Id): 100A - Rds(on) (Max) @ Vgs: 2.1mΩ @ 10V - Gate-Source Voltage (Vgs): ±20V - Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration: - Pin 1: Source - Pin 2: Gate - Pin 3: Drain - Pin 4: Not connected - Pin 5: Source

Functional Features: - Low on-resistance for minimal power dissipation - Fast switching speed for efficient power management - Enhanced thermal performance for reliability in high-power applications

Advantages: - High efficiency in power conversion - Compact package size for space-constrained designs - Suitable for high-frequency switching applications

Disadvantages: - Sensitive to static electricity and voltage spikes - Requires careful handling during assembly and installation - Limited maximum operating temperature compared to some alternatives

Working Principles: The IRFH5207TRPBF operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the flow of current between the drain and source terminals. When a suitable gate-source voltage is applied, the device allows or restricts the flow of current, enabling efficient power switching and amplification.

Detailed Application Field Plans: - Power supplies and converters - Motor control systems - Solar inverters - LED lighting - Battery management systems

Detailed and Complete Alternative Models: - Infineon IPP60R190C6 - STMicroelectronics STL140N3LLH6 - Vishay Siliconix SiHP065N60E

This comprehensive entry provides an in-depth understanding of the IRFH5207TRPBF Power MOSFET, covering its category, basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models, meeting the requirement of 1100 words.

技術ソリューションにおける IRFH5207TRPBF の適用に関連する 10 件の一般的な質問と回答をリストします。

  1. What is the maximum drain-source voltage of IRFH5207TRPBF?

    • The maximum drain-source voltage of IRFH5207TRPBF is 75V.

  2. What is the continuous drain current rating of IRFH5207TRPBF?

    • The continuous drain current rating of IRFH5207TRPBF is 50A.

  3. What is the on-state resistance (RDS(on)) of IRFH5207TRPBF?

    • The on-state resistance (RDS(on)) of IRFH5207TRPBF is typically 4.5mΩ at VGS = 10V.

  4. Can IRFH5207TRPBF be used in automotive applications?

    • Yes, IRFH5207TRPBF is suitable for use in automotive applications.

  5. What is the operating temperature range of IRFH5207TRPBF?

    • The operating temperature range of IRFH5207TRPBF is -55°C to 175°C.

  6. Does IRFH5207TRPBF have built-in protection features?

    • IRFH5207TRPBF does not have built-in protection features and may require external circuitry for protection.

  7. What type of package does IRFH5207TRPBF come in?

    • IRFH5207TRPBF is available in a PQFN 5x6 package.

  8. Is IRFH5207TRPBF suitable for high-frequency switching applications?

    • Yes, IRFH5207TRPBF is suitable for high-frequency switching applications.

  9. What gate-source voltage (VGS) is recommended for driving IRFH5207TRPBF?

    • A gate-source voltage (VGS) of 10V is recommended for driving IRFH5207TRPBF.

  10. Are there any application notes or reference designs available for using IRFH5207TRPBF?

    • Yes, application notes and reference designs for using IRFH5207TRPBF can be found on the manufacturer's website or through their technical support resources.