IPB80N06S205ATMA1
Product Overview
Category
The IPB80N06S205ATMA1 belongs to the category of power MOSFETs.
Use
It is used for high-power switching applications in various electronic devices and systems.
Characteristics
- High current-carrying capability
- Low on-state resistance
- Fast switching speed
- Low gate drive power loss
Package
The IPB80N06S205ATMA1 is typically available in a TO-263-3 package.
Essence
This MOSFET is essential for efficient power management and control in electronic circuits.
Packaging/Quantity
It is commonly packaged in reels with quantities varying based on manufacturer specifications.
Specifications
- Drain-Source Voltage (VDS): 60V
- Continuous Drain Current (ID): 80A
- RDS(ON) (Max) @ VGS = 10V: 5.2mΩ
- Gate-Source Voltage (VGS) (Max): ±20V
- Total Gate Charge (Qg): 110nC
- Operating Temperature Range: -55°C to 175°C
Detailed Pin Configuration
The IPB80N06S205ATMA1 typically has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)
Functional Features
- Low on-state resistance for minimal power loss
- High current-carrying capability for efficient power handling
- Fast switching speed for improved performance in switching applications
Advantages and Disadvantages
Advantages
- High current capacity
- Low on-state resistance
- Fast switching speed
Disadvantages
- Higher gate drive voltage requirement compared to some other MOSFETs
- Sensitivity to static electricity and overvoltage conditions
Working Principles
The IPB80N06S205ATMA1 operates based on the principles of field-effect transistors, utilizing its gate-source voltage to control the flow of current between the drain and source terminals.
Detailed Application Field Plans
The IPB80N06S205ATMA1 is widely used in various applications including: - Switch-mode power supplies - Motor control systems - Inverters - DC-DC converters - Automotive electronics
Detailed and Complete Alternative Models
Some alternative models to the IPB80N06S205ATMA1 include: - IRF1405PBF - FDP8878 - STP80NF70
In conclusion, the IPB80N06S205ATMA1 is a high-performance power MOSFET suitable for a wide range of high-power switching applications, offering low on-state resistance, high current-carrying capability, and fast switching speed. Its application spans across various industries and electronic systems, making it an essential component in power management and control circuits.
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技術ソリューションにおける IPB80N06S205ATMA1 の適用に関連する 10 件の一般的な質問と回答をリストします。
What is the maximum drain-source voltage of IPB80N06S205ATMA1?
- The maximum drain-source voltage of IPB80N06S205ATMA1 is 60V.
What is the continuous drain current rating of IPB80N06S205ATMA1?
- The continuous drain current rating of IPB80N06S205ATMA1 is 80A.
What is the on-state resistance (RDS(on)) of IPB80N06S205ATMA1?
- The on-state resistance (RDS(on)) of IPB80N06S205ATMA1 is typically 8.5mΩ at VGS = 10V.
What is the gate threshold voltage of IPB80N06S205ATMA1?
- The gate threshold voltage of IPB80N06S205ATMA1 is typically 2.35V.
What is the power dissipation of IPB80N06S205ATMA1?
- The power dissipation of IPB80N06S205ATMA1 is 300W.
What are the typical applications for IPB80N06S205ATMA1?
- IPB80N06S205ATMA1 is commonly used in motor control, battery protection, and power management applications.
Is IPB80N06S205ATMA1 suitable for automotive applications?
- Yes, IPB80N06S205ATMA1 is designed for automotive applications and meets the necessary standards and requirements.
Does IPB80N06S205ATMA1 have built-in ESD protection?
- Yes, IPB80N06S205ATMA1 features built-in ESD protection, enhancing its reliability in various technical solutions.
What is the operating temperature range of IPB80N06S205ATMA1?
- The operating temperature range of IPB80N06S205ATMA1 is -55°C to 175°C.
Can IPB80N06S205ATMA1 be used in high-frequency switching applications?
- Yes, IPB80N06S205ATMA1 is suitable for high-frequency switching due to its low RDS(on) and fast switching characteristics.