BFS483H6327XTSA1

Product Overview

Category

BFS483H6327XTSA1 belongs to the category of high-frequency RF transistors.

Use

It is commonly used in applications requiring high-frequency signal amplification, such as in wireless communication systems and radar equipment.

Characteristics

• High gain and low noise figure
• Wide frequency range
• High linearity
• Low power consumption

Package

BFS483H6327XTSA1 is typically available in a small surface-mount package, such as SOT-89 or SOT-223.

Essence

The essence of BFS483H6327XTSA1 lies in its ability to amplify high-frequency signals with minimal distortion and noise.

Packaging/Quantity

It is usually supplied in tape and reel packaging, with quantities varying based on manufacturer specifications.

Specifications

• Frequency Range: 1MHz - 6GHz
• Gain: 15dB
• Noise Figure: 1.5dB
• Power Dissipation: 150mW
• Operating Voltage: 3V - 5V
• Operating Temperature: -40°C to 85°C

Detailed Pin Configuration

1. Base
2. Emitter
3. Collector

Functional Features

• High-frequency signal amplification
• Low noise figure
• Broadband operation
• Suitable for linear and non-linear applications

Advantages

• Excellent gain-to-noise ratio
• Wide operating frequency range
• Compact package size
• Low power consumption

Disadvantages

• Limited power handling capability
• Sensitive to electrostatic discharge (ESD)

Working Principles

BFS483H6327XTSA1 operates based on the principles of bipolar junction transistor (BJT) amplification, where the input signal at the base terminal controls the flow of current between the collector and emitter, resulting in amplified output at high frequencies.

Detailed Application Field Plans

BFS483H6327XTSA1 finds extensive use in: - Cellular base stations - Satellite communication systems - Radar and microwave systems - Test and measurement equipment - Wireless LAN and Wi-Fi devices

Detailed and Complete Alternative Models

1. BFP183F6327XTSA1
   • Similar characteristics and package
   • Suitable for high-frequency amplification applications
2. BFR93A6327XTSA1
   • Low noise figure and wide frequency range
   • Surface-mount package for compact designs
3. BFT63H6327XTSA1
   • High gain and low power consumption
   • Ideal for broadband RF amplification

In conclusion, BFS483H6327XTSA1 is a versatile high-frequency RF transistor with excellent amplification capabilities, making it suitable for a wide range of wireless communication and radar applications.

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