1N5711WS-13
Product Category
The 1N5711WS-13 belongs to the category of Schottky Barrier Diodes (SBD).
Basic Information Overview
- Use: The 1N5711WS-13 is commonly used in applications requiring high-speed switching and low forward voltage drop.
- Characteristics: It exhibits low reverse leakage current and fast switching speed, making it suitable for various electronic circuits.
- Package: The diode is typically available in a surface mount package.
- Essence: Its essence lies in its ability to provide efficient rectification and signal detection in electronic circuits.
- Packaging/Quantity: It is usually supplied in reels or tape and reel packaging with varying quantities.
Specifications
- Forward Voltage Drop: Typically around 0.35V at 1mA
- Reverse Voltage: Up to 70V
- Maximum Forward Current: Approximately 15mA
- Operating Temperature Range: -65°C to +125°C
Detailed Pin Configuration
The 1N5711WS-13 typically consists of two pins: the anode and the cathode. The anode is connected to the positive terminal of the circuit, while the cathode is connected to the negative terminal.
Functional Features
- High-speed switching capability
- Low forward voltage drop
- Low reverse leakage current
- Surface mount package for easy integration into circuits
Advantages and Disadvantages
Advantages: - Fast switching speed - Low power dissipation - Compact size for space-constrained designs
Disadvantages: - Limited maximum forward current compared to other diode types - Sensitive to overvoltage conditions
Working Principles
The 1N5711WS-13 operates based on the Schottky barrier principle, where the metal-semiconductor junction allows for faster switching and lower forward voltage drop compared to standard PN junction diodes.
Detailed Application Field Plans
The 1N5711WS-13 finds application in various fields such as: - RF detectors - Clamping diodes - Mixer applications - Low-power rectifiers
Detailed and Complete Alternative Models
Some alternative models to the 1N5711WS-13 include: - BAT54 series - HSMS-286x series - BAR18 series
This diverse range of alternative models provides engineers with options based on specific design requirements and constraints.
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技術ソリューションにおける 1N5711WS-13 の適用に関連する 10 件の一般的な質問と回答をリストします。
Sure, here are 10 common questions and answers related to the application of 1N5711WS-13:
What is the maximum forward voltage of 1N5711WS-13?
- The maximum forward voltage of 1N5711WS-13 is typically 1V at a forward current of 10mA.
What is the reverse voltage rating of 1N5711WS-13?
- The reverse voltage rating of 1N5711WS-13 is 70V.
What is the maximum forward current of 1N5711WS-13?
- The maximum forward current of 1N5711WS-13 is 15mA.
What is the typical junction capacitance of 1N5711WS-13?
- The typical junction capacitance of 1N5711WS-13 is 2pF at a reverse bias of 0.5V.
What is the operating temperature range of 1N5711WS-13?
- The operating temperature range of 1N5711WS-13 is -65°C to +150°C.
Can 1N5711WS-13 be used in high-frequency applications?
- Yes, 1N5711WS-13 is suitable for high-frequency applications due to its fast switching speed and low junction capacitance.
Is 1N5711WS-13 suitable for use in RF detectors?
- Yes, 1N5711WS-13 is commonly used in RF detectors due to its low forward voltage and fast response time.
What are the typical applications of 1N5711WS-13?
- Typical applications of 1N5711WS-13 include mixers, detectors, and high-speed switching circuits.
Does 1N5711WS-13 require a heat sink for operation?
- No, 1N5711WS-13 is a small signal diode and typically does not require a heat sink for normal operation.
Can 1N5711WS-13 be used in low-power rectification circuits?
- Yes, 1N5711WS-13 can be used in low-power rectification circuits due to its low forward voltage and fast recovery time.
I hope these questions and answers provide helpful information about the application of 1N5711WS-13 in technical solutions. Let me know if you need further assistance!