S70GL02GP11FAIR23

Basic Information Overview

• Category: Flash Memory
• Use: Data storage in electronic devices
• Characteristics:
  • Non-volatile memory
  • High-speed read and write operations
  • Large storage capacity
• Package: Integrated Circuit (IC)
• Essence: Stores digital information in a compact and durable format
• Packaging/Quantity: Typically sold individually or in bulk quantities

Specifications

• Model: S70GL02GP11FAIR23
• Storage Capacity: 2 gigabytes (GB)
• Interface: Parallel NOR Flash
• Operating Voltage: 3.0 to 3.6 volts
• Access Time: 90 nanoseconds (ns)
• Erase/Program Cycles: Up to 100,000 cycles
• Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The S70GL02GP11FAIR23 has a pin configuration as follows:

1. VCC - Power supply voltage
2. GND - Ground reference
3. A0-A18 - Address inputs
4. DQ0-DQ15 - Data input/output lines
5. WE# - Write Enable control
6. CE# - Chip Enable control
7. OE# - Output Enable control
8. RP# - Reset/Ready control
9. RY/BY# - Ready/Busy status output
10. WP#/ACC - Write Protect/Access control
11. BYTE# - Byte Enable control
12. NC - No Connection

Functional Features

• High-speed data transfer rate
• Reliable data retention
• Efficient erase and program operations
• Advanced error correction techniques
• Low power consumption
• Support for various industry-standard interfaces

Advantages

• Large storage capacity allows for extensive data storage
• Fast read and write operations enhance overall system performance
• High endurance ensures longevity of the memory device
• Compatibility with different electronic devices and systems
• Low power consumption prolongs battery life in portable devices

Disadvantages

• Relatively higher cost compared to other storage technologies
• Limited write endurance compared to some newer memory technologies
• Susceptible to data loss in case of power failure during write operations

Working Principles

The S70GL02GP11FAIR23 operates based on the principles of NOR flash memory. It utilizes a grid of memory cells, each capable of storing a binary value (0 or 1). Data is written by applying electrical charges to specific memory cells, and it can be read by detecting the presence or absence of these charges. The memory cells are organized into pages and blocks, allowing for efficient reading, writing, and erasing operations.

Detailed Application Field Plans

The S70GL02GP11FAIR23 finds applications in various electronic devices and systems, including: - Personal computers - Mobile phones - Digital cameras - Gaming consoles - Automotive electronics - Industrial control systems

Detailed and Complete Alternative Models

• S29GL01GT10TFI010 - 1GB Parallel NOR Flash Memory
• S34ML04G200BHI000 - 4GB Serial NAND Flash Memory
• MT25QL128ABA8E12-0SIT - 128MB Quad SPI NOR Flash Memory
• W25Q256JVSIQ - 256MB Serial NOR Flash Memory

(Note: This list is not exhaustive and serves as an example of alternative models available in the market.)

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